简介：Thedischargeoperationregimeofpulsemodulatedatmosphericradiofrequency(RF)glowdischargeinheliumisinvestigatedonthedutycycleandfrequencyofmodulationpulses.Thecharacteristicsofradiofrequencydischargeburstintermsofbreakdownvoltage,alpha(α)-gamma(γ)modetransitionvoltageandcurrentaredemonstratedbythedischargecurrentvoltagecharacteristics.TheminimumbreakdownvoltageofRFdischargeburstwasobtainedatthedutycycleof20%andfrequencyof400kHz,respectively.Theα-γmodetransitionofRFdischargeburstoccursathighervoltageandcurrentbyreducingthedutycycleandelevatingthemodulationfrequencybeforetheRFdischargeburstevolvingintotheignitionphase,inwhichtheRFdischargeburstcanoperatestablyintheγmode.ItproposesthattheintensityandstabilityofRFdischargeburstcanbeimprovedbymanipulatingthedutycycleandmodulationfrequencyinpulsemodulatedatmosphericRFglowdischarge.

简介：Inatmosphericradio-frequency(rf)discharges,theplasmaparameters,suchaselectrondensity,sheaththicknessandsheathvoltage,arenoteasytobeprobedexperimentally,whiletheelectricalcharacteristics,suchasimpedance,resistanceandreactance,arerelativelyconvenienttobemeasured.Inthispaperwepresentedasimpletheoreticalmodelderivedfromthefluiddescriptionofgeneratedplasmaswithoutconsideringthecircuitmodel,toinvestigatetherelationshipbetweentheplasmaimpedanceandplasmaparameters.Byintroducingarelaxationfrequency,theplasmaimpedancecouldbepredictedbyformulaspresentedinthisstudy,andthemeanelectrondensityandsheaththicknesscanalsobecalculatedfromthemeasuredorsimulatedimpedanceandreactance,respectively.

简介：Zn_(1-x)Cu_xOthinfilmsweresynthesizedbytheradiofrequency(RF)magnetronsputteringtechniqueusingaZnOtargetcontainingdifferentpiecesofsmallCu-chips.X-raydiffraction(XRD)andscanningelectronmicroscopy(SEM)wereemployedtoanalyzethecrystallineandmicrostructureofthefihn,andX-rayphotoelectronspectroscopy(XPS)wasusedtoestablishthebondingcharacteristicsandoxidationstatesofcopperinsidetheZnOhost.Roomtemperature(RT)ferromagnetismwasobservedintheZn_(1-x)Cu_xOfilmsbyaQuantumDesignsuperconductingquantmninterferencedevice(SQUID)andthesaturationmagneticmomentofthefilmswasfoundtodecreasewiththeincreaseinCucontent.

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简介：WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.