简介:Thedischargeoperationregimeofpulsemodulatedatmosphericradiofrequency(RF)glowdischargeinheliumisinvestigatedonthedutycycleandfrequencyofmodulationpulses.Thecharacteristicsofradiofrequencydischargeburstintermsofbreakdownvoltage,alpha(α)-gamma(γ)modetransitionvoltageandcurrentaredemonstratedbythedischargecurrentvoltagecharacteristics.TheminimumbreakdownvoltageofRFdischargeburstwasobtainedatthedutycycleof20%andfrequencyof400kHz,respectively.Theα-γmodetransitionofRFdischargeburstoccursathighervoltageandcurrentbyreducingthedutycycleandelevatingthemodulationfrequencybeforetheRFdischargeburstevolvingintotheignitionphase,inwhichtheRFdischargeburstcanoperatestablyintheγmode.ItproposesthattheintensityandstabilityofRFdischargeburstcanbeimprovedbymanipulatingthedutycycleandmodulationfrequencyinpulsemodulatedatmosphericRFglowdischarge.
简介:Inatmosphericradio-frequency(rf)discharges,theplasmaparameters,suchaselectrondensity,sheaththicknessandsheathvoltage,arenoteasytobeprobedexperimentally,whiletheelectricalcharacteristics,suchasimpedance,resistanceandreactance,arerelativelyconvenienttobemeasured.Inthispaperwepresentedasimpletheoreticalmodelderivedfromthefluiddescriptionofgeneratedplasmaswithoutconsideringthecircuitmodel,toinvestigatetherelationshipbetweentheplasmaimpedanceandplasmaparameters.Byintroducingarelaxationfrequency,theplasmaimpedancecouldbepredictedbyformulaspresentedinthisstudy,andthemeanelectrondensityandsheaththicknesscanalsobecalculatedfromthemeasuredorsimulatedimpedanceandreactance,respectively.
简介:Zn_(1-x)Cu_xOthinfilmsweresynthesizedbytheradiofrequency(RF)magnetronsputteringtechniqueusingaZnOtargetcontainingdifferentpiecesofsmallCu-chips.X-raydiffraction(XRD)andscanningelectronmicroscopy(SEM)wereemployedtoanalyzethecrystallineandmicrostructureofthefihn,andX-rayphotoelectronspectroscopy(XPS)wasusedtoestablishthebondingcharacteristicsandoxidationstatesofcopperinsidetheZnOhost.Roomtemperature(RT)ferromagnetismwasobservedintheZn_(1-x)Cu_xOfilmsbyaQuantumDesignsuperconductingquantmninterferencedevice(SQUID)andthesaturationmagneticmomentofthefilmswasfoundtodecreasewiththeincreaseinCucontent.
简介:WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.