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1994年3期
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Silicon Epitaxial Wafer for X Band Double Read-type DDR IMPATT Diodes by Atmosphere/Low Pressure Growth Techniqt
Silicon Epitaxial Wafer for X Band Double Read-type DDR IMPATT Diodes by Atmosphere/Low Pressure Growth Techniqt
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摘要
SiliconEpitaxialWaferforXBandDoubleRead-typeDDRIMPATTDiodesbyAtmosphere/LowPressureGrowthTechniqtWangXiangwuandLuChunyi王向武,陆春...
DOI
odwq88kvdk/1067380
作者
王向武;陆春一
机构地区
不详
出处
《稀有金属:英文版》
1994年3期
关键词
Si
EPITAXY
Multilayer
X
BAND
DDR
分类
[金属学及工艺][金属材料]
出版日期
1994年03月13日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
稀有金属:英文版
1994年3期
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相关关键词
Si
EPITAXY
Multilayer
X
BAND
DDR
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