首页 > 《半导体光子学与技术：英文版》 > 2002年4期 > Investigation of Induced Distortions in a-Si∶H/a-SiNx∶H Multilayers by Raman Scattering Technique

Investigation of Induced Distortions in a-Si∶H/a-SiNx∶H Multilayers by Raman Scattering Technique

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摘要 Thea-Si∶H/SiNx∶HsampleseriesareinvestigatedbymeansofRamanscatteringtechnique(RST).Theresultshowsthatduetothestructuralmismatchbetweena-Si∶Handa-SiNx∶H,severeinduceddistortionsareproducedintheinterfaceoftheheterojunction,andtheseinduceddistortionstendtowardsacertainenergystate.Theorderingoftheinterfacestructuredependsontheperiodicnumberofmultilayerthinfilms.

DOI 9ojnn8ljr5/13513

作者 CAO Guo-rong GUO Shen-kang WANG Zhi-chao LIU Yin-chun SUN Mei-xiang

机构地区不详

出处《半导体光子学与技术：英文版》 2002年4期

关键词 Multilayer films Heterojunction Interface region INDUCED

分类 [电子电信][物理电子学]

出版日期 2002年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

半导体光子学与技术：英文版

半导体光子学与技术：英文版

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Multilayer films Heterojunction Interface region INDUCED

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