摘要
Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(~6.2V)ismuchlargerthanthatduetofullchargedelectrons(~1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.
出版日期
2015年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)