摘要
Anoveldiodestring-triggeredgated-PiNjunctiondevice,whichisfabricatedinastandard65-nmcomplementarymetal-oxidesemiconductor(CMOS)technology,isproposedinthispaper.Anembeddedgated-PiNjunctionstructureisemployedtoreducethediodestringleakagecurrentto13nA/μminatemperaturerangefrom25°Cto85°C.Toprovidetheeffectiveelectrostaticdischarge(ESD)protectioninmulti-voltagepowersupply,thetriggeringvoltageofthenoveldevicecanbeadjustedthroughredistributingparasiticresistanceinsteadofchangingthestackeddiodenumber.
出版日期
2015年10月20日（中国期刊网平台首次上网日期，不代表论文的发表时间）
