摘要
Developingalow-cost,room-temperatureoperatedandcomplementarymetal-oxide-semiconductor(CMOS)compatiblevisible-blindshort-wavelengthinfrared(SWIR)siliconphotodetectorisofinterestforsecurity,telecommunications,andenvironmentalsensing.Here,wepresentasilver-supersaturatedsilicon(Si:Ag)-basedphotodetectorthatexhibitsavisible-blindandhighlyenhancedsub-bandgapphotoresponse.Thevisible-blindresponseiscausedbythestrongsurface-recombination-inducedquenchingofchargecollectionforshort-wavelengthexcitation,andtheenhancedsub-bandgapresponseisattributedtothedeep-levelelectrontraps-inducedband-bendingandtwo-stagecarrierexcitation.TheresponsivityoftheSi:Agphotodetectorreaches504mA·W-1at1310nmand65mA·W-1at1550nmunder-3Vbias,whichstandsonthestageasthehighestlevelinthehyperdopedsilicondevicespreviouslyreported.Thehighperformanceandmechanismunderstandingclearlydemonstratethatthehyperdopedsiliconshowsgreatpotentialforuseinopticalinterconnectandpower-monitoringapplications.
出版日期
2019年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）
