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Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures

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摘要 TheinvestigationonopticalpropertiesofSi1-xGex/Sistrainedlayerstructureshasbeencarriedoutactivelyinrecentyears.Thephotoluminescencehasbe-comeabriskersubjectinthestudiesofitsvariousopticalproperties.Aresearchdevelop-menttophotoluminescencepropertiesofsomenewSi1-xGex/Sistrainedlayerstruc-turesisintroduced.

DOI pj0z5yp04y/2004251

作者 PENGYingcai 等

机构地区不详

出处《半导体光子学与技术：英文版》 1996年3期

关键词应变层超点阵光致发光光电子器件量子阱

分类 [电子电信][物理电子学]

出版日期 1996年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

半导体光子学与技术：英文版

半导体光子学与技术：英文版

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应变层超点阵光致发光光电子器件量子阱

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