摘要
ThetheoreticalSpectralresponseformulaoftheN^+-N-I-P^+siliconphotodetectorwithhigh/lowemissionjunctionisgiven.Atthesametime,consideringtheprocessrequirements,theoptimunstructureparametersofsiliconphotodetectorareobtainedbynumericalcalculationandsimulation.Undertheconditionoftheseoptimumstructureparameters,theresponsivityofthesiliconphotodetectorwillbe0.48A/Wat650nm.
出版日期
2003年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)