摘要
ThewholechemicaletchingprocessonaP-typepolycrystallinesiliconsubstratewithresistivity1-2Ω·cmisdescribed.Theformationmechanismofporouspolycrystallinesilicon(PPS)microstructurewasinvestigated.ThosehowtheinitialpitswereformedandanuniformmorphologyofPPSwasobtainedareexplained.Twotypesofetchingmechanismwerecharacterizedasdefectcontrolreactionanddiffusioncontrolreaction.ThemorphologyformedaftertheisotropicacidicsolutionetchingwithdifferentetchingtimeandHF/HNO3concentrationwascomparedwiththeeffectofthesameetchingprocessafteranisotropicalkalineetching.Thestudyshowedthatthethicknessofporouspolycrystallinesiliconlayerwithchemicalacidicetchingentirelydependedontheexistenceofvarioustypesofdefects.
出版日期
2005年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)