A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER-中国期刊网

摘要 AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.

1胡夏融;张波;罗小蓉;王元刚;雷天飞;李肇基. A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS.物理,2012-07.
2HanLei YeXingning等. INCREASING BREAKDOWN VOLTAGE OF LDMOST USING BURIED LAYER.物理电子学,2003-01.
3Jing CAO;Hua-Jie YIN;Rui SONG. Circular dichroism of graphene oxide： the chiral structure model.材料科学与工程,2013-01.
4. Operational technique of high Voltage Switchgear and its development in China.电机,1992-04.
5LauEngTin. A New Phase-Shifted Cascade High Voltage Inverter.电机,2005-02.
6邓柏权;严建成;黄锦华;彭利林. New Description Model of Sputtering on Material Surface.物理,2003-07.
7GHENBaijun;HOUJingying;等. Fabication of Organic／Polymeric Superlattice Structure and Its Use for Electroluminescent Device^①②.物理电子学,1997-03.
8刘凡宇;刘衡竹;刘必慰;郭宇峰. An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect.物理,2016-04.
9Gopi Krishna Saramekala;Sarvesh Dubey;Pramod Kumar Tiwari. A threshold voltage model of short-channel fully-depleted recessed-source/drain（Re-S/D） SOI MOSFETs with high-k dielectric.物理,2015-10.
10李威;郑直;汪志刚;李平;付晓君;何峥嵘;刘凡;杨丰;向凡;刘伦才. A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer.物理,2017-01.

A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

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A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

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