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Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrate

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摘要一薄轧了带的电影，在2-inch-diameter蓝宝石底层上成年，被激光起飞分开。原子力量显微镜学(AFM)和双水晶X光检查衍射(XRD)被采用了描绘表演在起飞过程前后轧了。分离和转移过程不改变水晶质量，这被表明显然轧了电影。InGaN/轧了multi-quantum-wells(MQW的)结构以后在分开的蓝宝石底层上是成年的并且与由使用PL和XRD光谱在一样的条件下面在常规底层上成长那相比。

DOI 5jo2q2nk4v/623060

作者 HUANG Jin ZHENG Qing-hong LIU Bao-lin

机构地区不详

出处《光电子快报：英文版》 2008年5期

关键词激光器离地升空技术 GAN LED薄膜晶体质量

分类 [电子电信][物理电子学]

出版日期 2008年05月15日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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光电子快报：英文版

光电子快报：英文版

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激光器离地升空技术 GAN LED薄膜晶体质量

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