Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

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摘要 Thispaperpresentsafiniteelementcalculationfortheelectronicstructureandstraindistributionofself-organizedInAs/GaAsquantumrings.Thestraindistributioncalculationsarebasedonthecontinuumelastictheory.Anidealthree-dimensionalcircularquantumringmodelisadoptedinthiswork.Theelectronandheavy-holeenergylevelsoftheInAs/GaAsquantumringsarecalculatedbysolvingthethree-dimensionaleffectivemassSchro¨dingerequationincludingthedeformationpotentialandpiezoelectricpotentialuptothesecondorderinducedbythestrain.Thecalculatedresultsshowtheimportanceofstrainandpiezoelectriceffects,andtheseeffectsshouldbetakenintoconsiderationinanalysisoftheoptoelectroniccharacteristicsofstrainquantumrings.
机构地区 不详
出处 《中国物理B:英文版》 2009年11期
出版日期 2009年11月21日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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