简介：Ap-typeAlAs(70.2nm)/16.5period［GaAs(3nm)/AlAs(0.7nm)］semiconductor/superlaticedistributedBraggreflector(DBR)hasbeengrownonn+-GaAs(100)substratebyV80Hmolecularbeamepitaxysystem.Experimentalreflectionspectrumshowsthatitscentralwavelengthis820nm,withthepeakreflectivityfor10-pairDBRofashighas96%,andthereflectionbandwidthofaswideas90nm.Weformeda20×20μm2squaremesatomeasuretheseriesresistanceusingwetchemicaletching.Fromthemeasurementresult,theseriesresistanceofabout50Ωisobtainedatamoderatedoping(3×1018cm-3).Finally,thedependenceoftheresistanceoftheDBRonthetemperatureisanalyzed.Fromtheexperimentalresult,itisfoundthatthemechanismofthelowseriesresistanceofthiskindofDBRmayincreasethetunnelingcurrentinthesemiconductor/superlatticemirrorstructure,whichwillresultinadecreaseinseriesresistance.