简介:AComputationalStudyofGasPhaseChemistryinCarbonNanotubeSynthessbyPECVD;AfieldpointbasedapproachforsensorconditioninginMO-CVDreactors;AMethodforReal-TimeControlofThinFilmCompositionUsingOESandXPS;Amechanism-basedmodelofchemicalvapordepositionofepitaxialSi{sub}(1-x)Ge{sub}xflirts
简介:[篇名]1.55-umsilicon-basedreflection-typewaveguide-integratedthermo-opticswitch,[篇名]120×90ElementThermoelectricInfraredFocalPlaneArraywithPreciselyPatternedAu-blackAbsorber,[篇名]4H-SiCEpitaxialGrowthfcrHigh-PowerDevices,[篇名]A90nmgenerationcopperdualdamascenetechnologywithALDTaNbarrier,[篇名]Acomparativemicrotribologicalinvestigationofdiamond-likecarbonfilmsforapplicationsinmicrosystems,[篇名]Acomparisonofmicrocrystailinesiliconpreparedbyplasma-enhancedchemicalvapordepositionandhot-wirechemicalvapordeposition:electronicanddeviceproperties.
简介:CharacteristicsofsiliconoxynitridesmadebyECRplasmas;CharacterizationandcomparisonofPECVDsiliconnitrideandsiliconoxynitridedielectricforMIMcapacitors;CharacterizationofsiliconoxynitridethinfilmsdepositedbyECR-PECVD;Characterizationofsiliconoxynitridesandhigh-kdielectricmaterialsbyangle-resolvedX-rayphotoelectronspectroscopy
简介:[篇名]3-inchfull-colorOLEDdisplayusingaplasticsubstrate,[篇名]AsignificantimprovementinmemoryretentionofMFISstructurefor1T-typeferroelectricmemorybyrapidthermalannealing,[篇名]Accuratereliabilityevaluationofnon-uniformultrathinoxynitridcandhigh-klayers,[篇名]Advancedgatedielectricmaterialsforsub-100nmCMOS,[篇名]AINfilmscpitaxialyformedbydirectnitridationofsapphireusingaluminumoxynitridcasabufferlayer,[篇名]Amorphoussilicon-oxynitridcsubmicronfibres,[篇名]CharacteristicsofCr-Al-N-Othinfilmspreparedbypulsedlaserdeposition.