简介：我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围，它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦？？

简介：Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.

简介：Aneworganicsemiconductortartaricaciddopedsaltofemeraldinepolyaniline(PANI-C4H6O6)hasbeenobtainedbythemethodofoxidativepolymerizationofmonomericanilinewithammoniumpersulfateinacidicsolution.ThestructurewascharacterizedbyFourierTransformInfraredtechnique(FTIR)andX-raydiffraction(XRD).Thetemperaturedependencedcconductivityδdc(T)showsasemiconductorbehaviorandfollowsthequasionedimensionalvariablerangehopping(Q1D-VRH)model.Dataonδdc(T)arealsodiscussed.

简介：WereportthedepositionofNb2O5filmsonunheatedBK-7glasssubstratesusingremoteplasmasputteringsystem.Theremoteplasmageometryallowspseudoseparationofplasmaandtargetbiasparameters,whichofferscompletedepositionratecontrol.Usingappropriateoxygenflowrates,high-densityandlow-lossNb2O5filmsaredepositedwithratesupto0.49nm/s.Lowerdepositionrates(~0.026nm/s)canalsobeobtainedbyworkingatlowtargetcurrentandvoltageandatlowpressure.Nb2O5filmsdepositedatdifferentrateshavetherefractiveindexofabout2.3andtheextinctioncoefficientaslowas6.9×10-5.

简介：Thenear-ultraviolet(n-UV)excitedblue-emittingSr2MgSi2O7:Eu2+phosphorsareusedforfluorescencelampandtricolorwhiteLEDs.Theeffectofnitrogen-dopedonthestructureofthehostandtheenhancementofphotoluminescenceisexperimentallyinvestigated.Theresultsshowthatastheamountofnitrogen-dopedvariesfrom0to0.6(at.),theluminousintensityisfoundtobeincreasedto169%,andthepartialreplacementofObyNresultsinachangeofthecrystalfieldbymodifyingthesymmetryofthecrystalstructure.Asaresult,withthenitrogen-dopedinsmallamount,theluminousintensity,chromaticitycoordinatesandthecolorpuritycanbeadjustedtoadesiredvalueintheapplications.

简介：Cu2ZnSnS4(CZTS)粉末被使用ZnS和Cu2没有任何中介，原料直接在450愠?浥瑰?瑳浯d分阶段执行的SnS3

简介：UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.

简介：UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.

简介：镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射，X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了，nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则，与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。

简介：srzn2（PO4）2：在大气中的高温固相反应合成Sm3＋荧光粉。srzn2（PO4）2：Sm3＋荧光粉是通过紫外光有效激发（UV）和蓝色光，和发射峰被分配到2-6h54G5//2过渡（563nm），2-6h74G5//2（597nm和605nm）和2-6h94G5//2（644nm和653nm）。对srzn2发射强度（PO4）2：Sm3＋的Sm3＋浓度的影响，其浓度猝灭效应srzn2（PO4）2：钐也观察到。当掺杂离子（=Li，Na和K）离子的发光强度，srzn2（PO4）2：Sm3＋可以明显增强。在国际照明委员会（CIE）的srzn2色坐标（PO4）2：Sm3＋定位在橙红色的区域。结果表明，该荧光粉具有潜在的应用在白光发光二极管（LED）。

简介：Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.

简介：Basedonopticalfibertechnology,themainelectriccircuitoftheremoteI/Ounitcontrollerisstudied.Andtheapplicationofthesystemisillustrated.

简介：Theoperationprincipleofanarrayedwaveguidegrating(AWG)multiplexerisintroducedandthe4×4AWGwithfollowingdesignparametersisdiscussedindetail,suchasthechoiceofwavelength,theneighboringarrayedwaveguidedistanceΔL,thechannelfrequencyintervalΔf,andthefreespectralrange.Thestructureof4×4AWGisdesignedandtheresultofstimulatedtestisalsogiven.Analysisshowsthatthe4×4AWGischaracterizedbyawidedynamicrange,lowcrosstalk,betterspectrumproperties,andacompactstructure.

简介：

简介：可重排的非阻塞的silicon-on-insulator-basedthermo眼有点尺寸变换器(SSC)和一个新开车电路的4脳4开关矩阵被设计并且制作。一个点尺寸变换器(SSC)的介绍减少了到不到10dB和新开车电路的插入损失改进了反应速度到不到1渭s。国家关键Basic部分地支持的CLC数字TN305中国在下面的研究专辑基础资助没有。G2000-03-66，和国家高技术不到资助号码60336010在资助号码2002AA312060，和中国的国家自然科学基础下面中国编程序。

简介：ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx（x<2）andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.

简介：ITU无线电通信全会，考虑到：a）无线电通信全会的任务和职能规定于组织法第13条和ITU公约第8条；

简介：2003年，中国IT服务市场规模呈大幅上升趋势，IT服务正成为IT产业中一个强势增长的市场。特别是随着我国企业信息化的逐步深入，信息化应用和解决方案将会掀起新一轮发展热潮，并将与电子政务一同为IT服务商提供巨大商机。

简介：2004年，宽带市场发展的主要动力来源于固网运营商的推动和市场需求的拉动。宽频娱乐、游戏将是宽带消费的一大热点，娱乐与体育竞技类的服务也是今年宽带内容消费的一大方向。

简介：摘要科技在飞速发展，移动移动通信技术也迅猛地发展到了第四代。每一代更替都是崭新的突破，在现代生活的快节奏要求下，人们对于网络技术各方面的要求更高了，而4G通信技术便应运而生，在技术方面，它的频谱更高；在通讯方式上，它更加多样化；它使移动通信智能化更加稳定，更加完善。有更高的科技含量，为客户提供的信息在完全方面也更有保障，在速度方面也更加快捷，本文就4G与4G+通信工程技术进行了分析与研究。