简介：T/R组件的热设计是有源相控阵雷达的核心技术之一。在脉冲周期状态下,T/R组件中的功放芯片在很短的时间内,芯片沟道温度会产生快速的变化。针对芯片在脉冲周期中的瞬态温度响应问题,对芯片沟道温度的瞬态变化进行仿真研究,并利用红外热分析仪进行测试验证。将仿真结果与实验结果进行对比,两者结果吻合较好,满足T/R组件的使用要求。

简介：Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.