简介：Thisletterpresentsafacenormalizationalgorithmbasedon2-Dfacemodeltorecognizefaceswithvariantposturesfromfront-viewface.A2-Dfacemeshmodelcanbeextractedfromfaceswithrotationtoleftorrightandthecorrespondingfront-viewmeshmodelcanbeestimatedaccordingtothefacialsymmetry.Thenbasedontheinnerrelationshipbetweenthetwomeshmodels,thenormalizedfront-viewfaceisformedbygraylevelmapping.Finally,thefacerecognitionwillbefinishedbasedonPrincipalComponentAnalysis(PCA).Experimentsshowthatbetterfacerecognitionperformanceisachievedinthisway.

简介：Theprincipleofstripwidthmeasuringsystemwithopticalfiberlinkisdescribed,andapracticalmethodisintroduced.

简介：轧了射出二极管(LEDs)，薄AlInN层在堵住层(EBL)的电子前面插入了的基于的蓝光试验性地被学习。插入薄EBL能改进轻产量力量并且减少效率，这被发现与常规AlGaN对应物相比低垂。基于数字模拟和分析，当薄AlInN层被使用时，电、光的特征上的改进主要被归因于电子漏电流的减小，它在量井(QW)增加搬运人的集中。

简介：Aprocesssuitableforproductiononalargescaleofcoldlightmirrorforfilmprojectorisintroduced.DepositionparametersrequiredforproducingTiO2/SiO2opticalmultialyersystemsbyelectronbeamevaporationofTiO2andSiO2startingmaterialsareinvestigated.Manufactureandtechniquesofcoldmirrorandtheadhesion,stability,wearandcorrosionresistanceofcoldmirrorbythisprocessarediscussed.Theresultshowsthatcoldmirrorproducedhasgoodopticalpropertiesandbetteradhesion.

简介：Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.