简介:Wehavedevelopedacost-effectiveandhighlycompact100-Gb/scoarsewavelengthdivisionmultiplexing(CWDM)transmitteropticalsubassembly(TOSA)usinglens-freehybridintegration.Toachievelargealignmenttolerances,distributedfeedbacklaserdiodes(DFB-LDs)arebutt-coupledtoafour-channelsilica-basedplanarlightwavecircuit(PLC)arrayedwaveguidegrating,withthesiliconsub-mountsandPLCadhesivelybonded.Then,aflexibleprintedcircuitisemployedtoconnecttheinternalDFB-LDsandtheexterioroftheTOSApackageforradiofrequencysignaltransmission,eliminatingtheexpensiveceramicfeed-through.ThepackagedCWDMTOSA,whichis15.8mm×7.0mm×6.0mminsize,showsaside-modesuppressionratioof>40dB,a3dBbandwidthof>18GHz,anderror-freetransmissionwithanaverageopticaloutputpowerof>0dBmanddynamicextinctionratioof>4.0dBat25.78125Gb/sovera10kmsingle-modefiberforallfourlanes.
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简介:Inthispaperwereviewthedesignanddevelopmentofa100J,10Hznanosecondpulsedlaser,codenamedDiPOLE100X,beingbuiltattheCentralLaserFacility(CLF).This1kWaveragepowerdiode-pumpedsolid-statelaser(DPSSL)isbasedonamasteroscillatorpoweramplifier(MOPA)design,whichincludestwocryogenicgascooledamplifierstagesbasedonDiPOLEmulti-slabceramicYb:YAGamplifiertechnologydevelopedattheCLF.Thelaserwillproducepulsesbetween2and15nsindurationwithprecise,arbitrarilyselectableshapes,atpulserepetitionratesupto10Hz,allowingreal-timeshapeoptimizationforcompressionexperiments.Oncecompleted,thelaserwillbedeliveredtotheEuropeanX-rayFreeElectronLaser(XFEL)facilityinGermanyasaUK-fundedcontributioninkind,whereitwillbeusedtostudyextremestatesofmatterattheHighEnergyDensity(HED)instrument.
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简介:Wehavedesignedandrealizedanathermal4-channelwavelength(de-)multiplexerinsiliconnitride(SIN).Minimizedthermalsensitivityisachievedinawidewavelengthrangebyusingwideandnarrowwaveguideswithlowanddifferentthermal-opticcoefficientsinthetwoarmsofMach-Zehnderinterferometers(MZIs).TheSiNcorelayerandSiO2claddinglayersaredepositedbyalow-temperatureplasma-enhancedchemicalvapordep-ositionprocess.ThefabricatedMZIfilterexhibitsathermalsensitivitywithin4-2.0pm/℃inawavelengthrangeof55nmtonear1300nm.Then,anathermal(de-)multiplexerbasedoncascadedMZIshasbeendemonstratedwithacrosstalk〈-22dBandathermalsensitivity〈4.8pm/℃forallfourchannels,reducedby77%comparedtoaconventionalSiN(de-)multiplexer.OwingtothepassiveoperationandcompatibilitywiththeCMOSback-endprocess,ourdeviceshavepotentialapplicationsin3Dintegrationofphotonicsandelectronics.
简介:Inthiswork,SMAT(surfacemechanicalattritiontreatment)wasperformedonTi6Al4V.PlasmanitridingoftheSMATedsampleswasinvestigatedincomparisonwithcoarse-grainedsamples.Thesampleswerecharacterizedusingopticmicroscope,SEM,TEMandVickersmicrohardnesstester.TheresultsshowedthatasignificantlythickercompoundlayerwithhigherhardnesswasobtainedfortheSMATedsampleswhencomparedwithun-SMATedsamplesafternitriding.CorrosionresistanceofTi6Al4VinaRinger’ssolutionwasstudiedbyelectrochemicaltechniquesincludingopencircuitpotentialmeasurement,potentiodynamicpolarizationandEIS(electrochemicalimpedancespectroscopy).Overall,ourresultsidentifiedthebeneficialimpactsoftheduplexSMAT/nitridingtreatmentoncorrosionbehaviourofTi6Al4V.Weartestswerealsoperformedonaball-on-disctribometerwherethetreatedsampleswererubbedagainsta6mmdiameteraluminaballunderanormalloadof5NusingRinger’ssolutionaslubricantmedia.ThefrictioncoefficientoftheSMATedandnitridedsampleswasreducedcomparedtotheuntreatedsamples.WearratesdemonstratedthatSMATcombinedwithnitridingimprovedwearresistanceofTi6Al4Valloy.