简介:利用蒙特卡罗模拟程序MCNP研究了NaI(Tl)探测器对海水中137Cs、131I的比计数率响应情况;计算了NaI(Tl)探测器对不同半径海水球体源中137Cs与131I的比计数率响应曲线;分析了探测器防水套筒、NaI(Tl)晶体尺寸与结构、射线能量等因素对比计数率响应的影响;拟合了3R3型、5R5型NaI(Tl)探测器最大比计数率ymax及有效探测距离D。防水套筒模型与裸晶体简化模型的计算结果对比表明,裸晶体模型会给计算带来明显的偏差,应在模型设计时,考虑探测器结构,构建更精确的模型。
简介:On △I=4 Bifurcation PhenomenaOn△I=4BifurcationPhenomena¥ZhangJingye;YangSunandMikeGuidryTheexperiments-bythenew7--raydetector...
简介:Carbonnanotubeswithjunctionsmayplayanimportantroleinfuturenanoelectronicsandfuturenanodevices.Inparticular,junctionsconstructedwithmetalandsemiconductingnanotubeshavepotentialapplications.Basedontheorthogonaltight-bindingmoleculardynamicsmethod,wepresentourstudyofthestructurestabilityofI-typecarbonnanotubejunctions.
简介:ThenewKEKCentralcomputersystememployedHPSSfordatamanagementTogainhighperformanceaccesstoHPSSeasily,webuiltawrapperoftheclientAPL.
简介:TheLaboratoryforIntenseLasers(L2I)isaresearchcentreinopticsandlasersdedicatedtoexperimentalresearchinhighintensitylaserscienceandtechnologyandlaserplasmainteraction.Currentlythelaboratoryisundergoinganupgradewiththegoalofincreasingtheversatilityofthelasersystemsavailabletotheusers,aswellasincreasingthepulserepetitionrate.Inthispaperwereviewthecurrentstatusofthelaserresearchanddevelopmentprogrammeofthisfacility,namelytheupgradedcapabilityandtherecentprogresstowardstheinstallationofanultrashort,diode-pumpedOPCPAlasersystem.
简介:在数字方法的帮助下,在旋转的洞以内的流动地和它的伴随的损失机制在1二的st部分分开纸。便于比较,旋转洞进一步作为转子定子洞案例和转子转子洞被分类大小写。除了流动近围之外,结果作为inviscid流动在两种洞行为以内显示那流动,附近更低的G区域并且在旋转的孔的附近。在除了如此的inviscid-flow-dominate领域的区域,理论核心旋转因素能安全地被用来在洞以内预言swirl比率。当详细流动模式被考虑时,Ekman类型流动在在哪儿的表面边界层的圆周附近存在粘滞效果是非可以忽略的。由于模仿的洞案例的复杂侧面,然而,旋涡结构在洞以内被改变。由比较,打漩比率能被用来预言损失的大小。由于转子转子洞的相对明显的旋转效果,打漩比率甚至在当前的模型增加到1.4,它比包围圆盘快意味着那流动是动人的。进一步的调查发现这种高度旋转的流动伴有严肃的不受欢迎的压力损失。不同于它的对应物,插句地打漩当液体通过转子定子洞时,超过1.0的比率不发生。如此的结构设计什么时候是不可避免的,因此被建议有附加里面的throughflow的转子转子流动洞应该在引擎设计被避免或某些大小应该被提供。自从这些维的参数在state-of-art的设计是典型的,在当前的纸做的模拟是有意义的。Re和Cw的相对更低的范围没在二部分糊的水流被考虑。
简介:Accordingtothegoodchargetransportingpropertyofperovskite,wedesignandsimulateap–i–n-typeall-perovskitesolarcellbyusingone-dimensionaldevicesimulator.Theperovskitechargetransportinglayersandtheperovskiteabsorberconstitutetheall-perovskitecell.Bymodulatingthecellparameters,suchaslayerthicknessvalues,dopingconcentrationsandenergybandsofn-,i-,andp-typeperovskitelayers,theall-perovskitesolarcellobtainsahighpowerconversionefficiencyof25.84%.Thebandmatchedcellshowsappreciablyimprovedperformancewithwidenabsorptionspectrumandloweredrecombinationrate,soweobtainahighJ_(sc)of32.47mA/cm~2.Thesmallseriesresistanceoftheall-perovskitesolarcellalsobenefitsthehighJ_(sc).Thesimulationprovidesanovelthoughtofdesigningperovskitesolarcellswithsimpleproducingprocess,lowproductioncostandhighefficientstructuretosolvetheenergyproblem.
简介:AseriesofRbxCs1-xAg4I5(x=0-1)thinfilmsweregrownbyvacuumevaporationonNaCIcrystalsubstratesat350K.Theabsorptionspectraofthesefilmsweremeasuredat80Kinthewavelengthrangefrom240nmto400nm.ItisshownthatsuperionicconductorthinfilmsofquaternarycompoundRb0.5Cs0.5Ag4I5andternarycompoundRbAg415canbeobtainedatx=0.5-0.6andx=0.7-1,respectively.Atx=0.65,thecombinedcompoundfilmofthemixtureof30mol%RbAg4I5and70mol%Rb0.5Cs0.5Ag4I5ispresented.Then,basedonthespectralpositionsoftheA1andA2peaks,wedeterminedthattheRb0.5Cs0.5Ag4I5excitoncouplingenergyRexis0.21eV,theforbiddenzonewidthEgis3.82eVandtheexcitonradiusaexis0.70hm.Furthermore,theionicconductivitiesofsuperionicconductorthinfilmsofRbAg4I5andRb0.5Cs0.5Ag4I5andtheirmixturefilmareinvestigated,respectively,inthetemperaturerange303K-393K.
简介:Inthispaper,normalincidenceverticalp-i-nphotodetectorsonagermanium-on-insulator(GOI)platformweredemonstrated.Theverticalp-i-nstructurewasrealizedbyion-implantingboronandarsenicatthebottomandtopoftheGelayer,respectively,duringtheGOIfabrication.Abruptdopingprofileswereverifiedinthetransferredhigh-qualityGelayer.Thephotodetectorsexhibitadarkcurrentdensityof~47mA∕cm~2at-1Vandanopticalresponsivityof0.39A/Wat1550nm,whichareimprovedcomparedwithstate-of-the-artdemonstratedGOIphotodetectors.Aninternalquantumefficiencyof~97%indicatesexcellentcarriercollectionefficiencyofthedevice.Thephotodetectorswithmesadiameterof60μmexhibita3dBbandwidthof~1GHz,whichagreeswellwiththeoreticalcalculations.Thebandwidthisexpectedtoimproveto~32GHzwithmesadiameterof10μm.ThisworkcouldbesimilarlyextendedtoGOIplatformswithotherintermediatelayersandpotentiallyenrichthefunctionaldiversityofGOIfornear-infraredsensingandcommunicationintegratedwithGeCMOSandmid-infraredphotonics.