简介:ThetransportpropertiesintheLa2/3(Ca1-xSrx)1/3MnO3(x=0,1/3,2/3)filmspreparedusingtheRFmagnetronsputteringmethodwereinvestigated.TheeffectoftheCa,Srdouble-dopingattheApositionintheLa2/3A1/3MnO3onthestructureofthetargetsandtransportofthefilmshasbeenstudied.Withtheincreaseofx,thestructuresofthetargetstransformfromtherhombohedralphasetothecubicphase;themetal-insulatorphasetransitiontemperature(Tp)ofthefilmsincreases;andthecorrespondingpeakresistivitydecreases.Allthephenomenacanbequalitativelyexplainedbythelatticeeffect.
简介:TheX-raydiffractionpeak-shiftmethodwasintroducedintothedeterminationofdeformationfaultprobability(α)ofFe-Mn-SialloyswithvariousMncontentsandthermomechanicalcyclingnumbers.Thepreciselatticeconstantsrequiredwereobtainedbynumericalcalculationinsteadofusingstandardsamplewithoutanyfault.Theinfluenceofinternalstressonthedeterminedαhasbeenevaluated,andthecausedrelativeerrorwasdeterminedasabout4%andthusnegligible.TheresultsshowthatthedeformationfaultprobabilityincreaseswithdecreasingMn-contentandincreasingcyclenumber,whicharequalitativelyconsistentwiththoseresultsofPsfdeterminedbypeak-broadeningmethod.
简介:国际半导体工艺指南(ITRS)的组织者们,迄今仍主要关注SiCMOS器件,但也在考虑非数字、非Si器件的应用,例如,无线通信。就数字电路来说,HRS的组织者们也不得不寻找Si以外的材料,在ITRS的最新版(2005年版)中,有这样的评论:随着本“指南”接近末期,器件将按准弹道模式工作,其电流增益将按与目前所知不同的参数得以增强,实际上碳纳米管、纳米线和其它高输运沟道材料(例如,Ge、Si衬底上的Ⅲ-Ⅴ族化合物薄膜沟道)是需要的。这一陈述是记载在“长期指南(2014-2020年)”部分。“准弹道”意味着载流子平均自由程和驰豫时间达到器件特征尺寸量级和工作频率量级。同时需建立新的电荷输运物理模型。
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