简介:Theself-assembledInAs/GaAsquantumdots(QDs)withextremelylowdensityof8×10~6cm~(-1)areachievedusinghighergrowthtemperatureandlowerInAscoveragebylow-pressuremetal-organicchemicalvapourdeposition(MOVCD).Asaresultofmicro-photoluminescence(micro-PL),forextremelylowdensityof8×10~6cm~(-1)InAsQDsinthemicro-PLmeasurementsat10K,onlyoneemissionpeakhasbeenachieved.ItisbelievedthattheInAsQDshaveagoodpotentialtorealizesinglephotonsources.