简介：Inthispaper,wepresentsimulationresultsofanelectroopticalvariableopticalattenuator(VOA)inte-gratedinsilicon-on-insulatorwaveguide.Thedeviceisfunctionallybasedonfreecarriersabsorptiontoachieveattenuation.Beampropagationmethod(BPM)andtwo-dimensionalsemiconductordevicesimu-lationtoolPISCES-Ⅱwereusedtoanalyzethedcandtransientcharacteristicsofthedevice.Thedevicehasaresponsetime(includingrisetimeandfalltime)lessthan200ns,muchfasterthanthethermoopticandmicro-electromechanicalsystems(MEMSs)basedVOAs.

简介：Anovel1.55-μmspot-sizeconverterintegratedelectroabsorptionmodulatorwasdesignedwithconventionalphotolithographyandchemicalwetetchingprocess.Aridgedouble-corestructurewasemployedforthemodulator,andaburiedridgedouble-corestructurewasincorporatedforthespot-sizeconverter.Thepassivewaveguidewasopticallycombinedwithalaterallytaperedactivewaveguidetocontrolthemodesize.Thefigureofmeritis4.1667dB/V(/100μm)andthebeamdivergenceanglesinthehorizontalandverticaldirectionswereassmallas11.2°and13.0°,respectively.

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