简介：Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.

简介：Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.

简介：Inthisstudy,tungsten(W)wascoatedonacopper(Cu)substratebyusingdouble-glowdischargetechniqueusingapureWpanelasthetargetandargon(Ar)asthedischargeandsputteringgas.ThecrystalstructureoftheWcoatingwasexaminedbyX-raydiffraction(XRD).Scanningelectronmicroscopy(SEM)wasperformedwithcross-sectionimagestoinvestigatethepenetrationdepthofWintotheCubody.Additionally,thepropertiesofwearabilityresistance,corrosionresistanceandmechanicalstrengthoftheWcoatedCumatrixwerealsomeasured.Itisconcludedthatindouble-glowplasma,WcoatedCucanbefacilelyprepared.ItisnoticedthatthetreatmenttemperatureheavilydominatesthepropertiesoftheW-Cucomposite.

简介：Thisworkinvestigatesinternalplasmaprocessparametersusingahairpinresonanceprobeandopticalemissionspectroscopy.ThedependenceofelectrondensityandatomicfluorineonthepercentageofoxygeninanSF6/O2dischargewasmeasuredusingthesemethods.AnRIEOxfordInstruments80pluschamberwasusedfortheexperiments.Twodifferentprocesspowers(100Wand300W)ataconstantpressure(100mTorr)wereused,anditwasfoundthattheopticalemissionintensityofthe703.7nmand685.6nmlinesofatomicfluorineincreasedrapidlyasoxygenwasaddedtotheSF6discharge,reachedtheirmaximumatanO2fractionof20%andthendecreasedwithfurtheradditionofoxygen.TheplasmaelectrondensitywasalsostronglyinfluencedbytheadditionofO2.

简介：WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.

简介：Chemicalvapordeposition-tungsten(CVD-W)coatingcoveringthesurfaceoftheplasmafacingcomponent(PFC)isaneffectivemethodtoimplementthetungstenmaterialasplasmafacingmaterial(PFM)infusiondevices.ResidualthermalstressinCVD-Wcoatingduetothermalmismatchbetweencoatingandsubstratewassuccessfullysimulatedbyusingafiniteelementmethod(ANSYS10.0code).Thedepositionparametriceffects,i.e.,coatingthicknessanddepositiontemperature,andinterlayerwereinvestigatedtogetadescriptionoftheresidualthermalstressintheCVD-Wcoating-substratesystem.AndtheinfluenceofthesubstratematerialsonthegenerationofresidualthermalstressintheCVD-WcoatingwasanalyzedwithrespecttotheCVD-WcoatingapplicationasPFM.ThisanalysisisbeneficialforthepreparationandapplicationofCVD-Wcoating.

简介：TheaccumulationofHeonaWsurfaceduringkeV-Heionirradiationhasbeensimulatedusingclusterdynamicsmodeling.Thisisbasedmainlyonratetheoryandimprovedbyinvolvingdifferenttypesofobjects,adoptingup-to-dateparametersandcomplexreactionprocesses,aswellasconsideringthediffusionprocessalongwithdepth.Thesenewfeaturesmakethesimulatedresultscompareverywellwiththeexperimentalones.Theaccumulationanddiffusionprocessesareanalyzed,andthedepthandsizedependenceoftheHeconcentrationscontributedbydifferenttypesofHeclustersisalsodiscussed.TheexplorationofthetrappinganddiffusioneffectsoftheHeatomsishelpfulinunderstandingtheevolutionofthedamagesinthenear-surfaceofplasma-facingmaterialsunderHeionirradiation.

简介：Themicroscopiceffectivechargesinmirrornuclei51Mnand51Feareinvestigatedwiththeparticle-vibrationcouplingmodelbasedontheself-consistentSkyrme-Hartree-Fockandcontinuumrandom-phase-approximationapproaches.Theisovectorpartsarepredictedtobearound0.15,andtheprotoneffectivechargesarearound1.25e,whichislessthantheempiricalvalueofeeffp=1.5e.Themicroscopiceffectivechargesinneutronrich51Mnareabout10%lessthanitsprotonrichmirror.TheseeffectivechargesarecombinedwiththeshellmodeltocalculatethereducedelectricquadrupoletransitionprobabilityB(E2)valuesin51Mnand51Fe.ItturnsoutthatthemicroscopiceffectivechargeshavewellreproducedtheB(E2)valuesanditsratiointheterminatingstates.