简介：利用同步辐射（BSRF）漫散射站四圆衍射仪，对SiC体单晶的结构进行了判定以及对利用常压化学气相沉积（APCVD）生长的3C－SiC/Si(001）中的孪晶及含量进行了分析。六方{10-15}极图证明了该SiC单晶为6H（H为Hexagonal的缩写）结构。对3C－SiC外延薄膜，Φ扫描证明了3C－SiC外延生长于Si衬底上，外延取向关系为：（001）3C－SiC//(001)Si,[111]3C-SiC//[111]Si。3C－SiC的{111}极图在x=15.8°出现了新的衍射，采用六方{10-10}极图以及基体倒格点111、孪晶倒格点002的Mapping分析了x=15.8°处产生的衍射为3C－SiC孪晶所致，并利用ω扫描估算了孪晶的含量约为1％。

简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.

简介：Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.

简介：Sinteredsiliconcarbide(SiC)wasetchedbyadielectricbarrierdischargesource.Ahighvoltagebipolarpulsewasusedwithheliumgasfortheplasmageneration.OnestablefilamentplasmawasgeneratedandcouldbeusedforSiCetching.Astheprocessinggas(NF3)mixingrateincreased,thewidthanddepthoftheetchingprofilebecamenarroweranddeeper.ThedifferentiatedV-QLissajousmethodwasusedformeasuringthecapacitances(Ceq)oftheelectrodeaftertheplasmaturnedon.ThewidthoftheetchingprofilewasproportionaltoCeq.Asthecurrentpeakvalue/smxofthesubstratecurrentincreased,thevolumeremovalrateofSiCincreased.Theetchdepthwasproportionaltotheratioof/smxtoCeq.Additionally,becauseofthedifferentcharacteristicsoftheplasmadisksonSiCsubstratebythevoltagepolarity,theetchingprofilewasunstable.However,inhighNF3mixingprocess,theetchingprofilebecamestableanddeeper.

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简介：Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.

简介：本文用EXAFS对三种钴基合成柴油催化剂进行了表征，结果表明Co-Zr共沉淀催化剂与Co/Zr浸渍型催化剂钴物相主要为Co3O4,Co-Zr-Si混合沉淀型催化剂钴物相主要为Co2SiO4，共沉淀催化剂钴的配位数明显降低，钴锆相互分散好，接触界面大，因而反应活性高，重质烃选择性高，而混合沉淀型催化剂Co2SiO4物相在预处理条件下难以还原，所以反应活性低，重质烃选择性较差。

简介：利用同步辐射对合成金刚石晶体中面状缺陷进行了形貌学研究。在晶体中观察到多个层错和一个由两个层错三角形组成的层错四面体。计算了层错及层错四面体各个边界的方向指数，确定了各个层错的面指数。根据层错的消像规律．确定了各个层错的位移矢量。除一个层错为Frank型简单层错外。其余层错皆为既具有Frank位移，又具有Shockley位移的复合型层错。分析了层错的形成机理。层错尺寸火小在0．68-1．15mm之间，是前人在合成及天然金刚石中从未见到的。

简介：本文利用同步辐射角分辨光电子谱研究了f.c.c.Fe与Cu{111}之间的界面。观察到了位于表面布里渊区中K点附近的界面态，表明它是一个有序的界面。垂直出射的价带谱表明外来Fe原子对衬底Cu{111}的能带结构无任何影响。这与互混的Co/Cu{111}的结果不同，表明界面处不存在Fe与Cu原子之间的互混。

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简介：对K3±δC60多晶薄膜进行了同步辐射光电子谱研究。入射光子能量为17－86cV。实验发现K3±δC60光电子谱的HOMO－1，HOMO及LUMO等导出能带的谱峰强度均随入射光子能量的增加而呈现振荡的性质，与纯C60的光电子谱峰随入射光子能量变化的趋势相似。结果C60分子独特的笼状几何结构，认为其电离截面的变化是由于K3±δC60的末态电子在C60分子笼内形成球状驻波引起的。以驻波的边界条件为基础进行理论计算，得到的电离截面极小值对应的光子能量与实验得到的结果符合良好。

简介：Thetransportprocessof12CionsinwaterwasstudiedwithSRIMcodeandGeant4toolkit.TheSRIMresultsindicatethatthetransversediffusionof12Cionbeamcausesdistortionofenergydepositalongthebeamdirection.Thedistortionbecomesmorenotableasthetrans-versediffusionincreases.ThesimulationresultsofGeant4indicatethattheinfluenceofsecondaryfragmentsonenergydepositdistributionwouldbethemainfactorcausingthedistortioninhigherenergyrange.Intheregionadjacenttothebeamlinewherethecontributionfrom12Cionsdomi-nates,thecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfrag-mentsexceedthatof12C.Amongallthesecondaryfragments,thecontributionsofH,HeandBionsaremostlynotable.Itisalsofoundthatsomepositron-emittingsecondaryfragmentscouldbeveryusefulforpositionemittingtomography(PET).

简介：利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明：当衬底温度超过200K，乙烯即发生脱氢反应，σCH和σCC能级均向高结合能方向移动。在室温下，σCH和σCC能级位置与乙炔在Ru(1010）表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温，Ru(1010）表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010）表面以分子状态稳定吸附。在有K的Ru(1010）表面上，室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。

简介：根据K在C60晶体中的扩散系数分析了在C60（111）单晶解理面上制备K3C60单晶膜的实验条件。对制备出的样品进行了角分辨光电子谱研究。结果表明样品确实为K3C60单晶，并首次观察到K3C60的能带色散。

简介：BasedonthesinglebiasingelectrodeexperimentstooptimizetheconfinementofplasmainthedeviceofKT-5Ctokamak,dual-biasingelectrodeswereinsertedintotheKT5Cplasmaforthefirsttimetoexploretheenhancingeffectsofbiasingandthemechanismsofthebiasing.Bymeansofapplyingdifferentcombinationsofbiasingvoltagesontothedualelectrodes,thechangesofE_r,whicharethekeyfactorforboostinguptheE_r×Bflowshear,wereobserved.Thetimeevolutionshowedthattheinnerelectrodeplayedamajorroleindual-biasing,whichdrewlargercurrentthantheouterone.Theouterelectrodeproducedlittleinfluence.Itturnedoutthatthedual-biasingelectrodeswereaseffectiveasasingleoneinimprovingtheplasmaconfinement,forthemechanismofbiasingwasessentiallyanedgeeffect.

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简介：测量了K3C60单晶薄膜[111]方向的同步辐射角分辨光电子谱。首次观察到K3C60能带色散。通过对能带色散关系的分析，确立了K3C60低温下的一维无序取向结构。

简介：InspiteofthecurrentprevalenceoftheCVD-basedprocesses,theelectricarcremainsaninterestingprocessforthesynthesisofcarbonnanoforms,thankstoitsversatility,robustnessandeasiness.Italsoallowsperformingin-situsubstitutionofcarbonatomsbyhetero-elementsinthegraphenelattice.Ourworkaimstoestablishacorrelationbetweentheplasmaproperties,typeandchemicalcomposition(andthesubstitutionrate)oftheobtainedsingle-wallcarbonnanotubes.TheplasmawascharacterizedbyopticalemissionspectroscopyandtheproductswereanalyzedbyhighresolutiontransmissionelectronmicroscopyandcorelevelElectronEnergy-LossSpectroscopy(EELS).Resultsshowthatahighboroncontentleadstoaplasmatemperaturedecreaseandhinderstheformationofnanotubes.Thiseffectcanbecompensatedbyincreasingthearccurrentand/oryttriumcontent.Theoptimalconditionsforthesynthesisofboron-and/ornitrogen-substitutednanotubescorrespondtoahighaxialplasmatemperatureassociatedtoastrongradialgradient.EELSanalysisconfirmedthattheboronincorporatesintothegraphemelattice.

简介：考察了锆助剂含量对钴基催化剂的结构及费－托合成反应性能的影响。结果表明，随着锆含量的增加，甲烷的生成受到抑制，重质烃选择性提高，重质烃合成的操作温度区间加宽，且催化剂仍保持较高的活性。TPR，H2－TPD，XRD及EXAFS等表征结果表明，锆助剂单层分散与硅胶表面，而钴以一定尺寸的聚集态存在；随着锆含量的增加，锆覆盖的硅胶表面增加，裸露的硅胶表面减小，而钴的分散度几乎不变。这使得钴锆界面增大，钴硅界面减小，有利于重质烃的生成。另外，H2－TPD结果还表明，催化剂存在有从钴到锆硅载体的氢溢流。