简介：Withrapiddevelopmentcommunicationsystem,highsignaltonoiseratio(SNR)systemisrequired.Inhighfrequencybandwidth,highloss,lowQinductorsandhighnoisefigureisasignificantchallengewithon-chipmonolithicmicrowaveintegratedcircuits(MMICs).Toovercomethisproblem,highQ,lowlosstransmissionlinecharacteristicswasanalyzed.Comparedwiththesameinductorvalueofthelumpedcomponentandthetransmissionline,ithasahigherQvalueandlowerlossperformanceinhighfrequency,anda2-stagecommon-sourcelownoiseamplifier(LNA)waspresented,whichemployssourceinductorfeedbacktechnologyandhighQlowlosstransmissionlinematchingnetworktechniquewithover17.6dBsmallsignalgainand1.1dBnoisefigurein15GHz–18GHz.TheLNAwasfabricatedbyWINsemiconductorscompany0.15μmgalliumarsenide(GaAs)Phighelectronmobilitytransistor(P-HEMT)process.Thetotalcurrentis15mA,whiletheDCpowerconsumptionisonly45mW.