简介:PhotoconductivityCharacteristicsofPorousSi①CHAOZhanyun,WANGKaiyuan(DepartmentofElectronicEnginering,SoutheastUniversity,Nanji...
简介:Poroussiliconsamplesarepreparedbypulseelectrochemical-etchingandDCelectrochemical-etching.Theeffectsofdifferentpreparationmethodsonluminescentcharacterizationofporoussiliconareinvestigated.ComparedwithDCelectrochemical-etching,pulseelectrochemical-etchingproducestheporoussiliconcharacterizedbyamoreevensurface,astrongerluminescenceandaPLblueshifttoacertaindegree.
简介:Inordertorealizetheplanargradientrefractiveindex(GRIN)microlenswhichisbaseduponporoussilicon(PSi)andfabricatedonsilicononinsulator(SOI),anovelanodizationmethodisusedbyapplyinglateralelectricfield.Themicrolenswithsmoothvariationoftheeffectiveopticalthicknessisachieved.Thelensistransparentintheinfraredregion,includingtheopticalcommunicationwindow(1.3μm
简介:Poroussiliconpreparedbypulseelectro-etchingisheat-treatedinO2atmospherewithanenhancementofitsPLpeakandanimprovementofitsPLstability.ThePLpeakofasampleporoussilicontreatedinO2atmosphereat1000℃presentsitselfathree-peakstructureand,comparedwithanun-heat-treatedsample,thereexistsblueshiftof~40nm.
简介:Bydepositingdiamondlikecarbon(DLC)filmwithradiofrequencyplasmachemicalvapordeposition(RFPCVD)method,anewsurfacepassivationtechniqueforphotoluminescenceporoussilicon(PS)hasbeenstudied.ThesurfacemicrostructureandphotoelectricpropertiesofbothporoussiliconandDLCcoatedPShavebeenanalyzedbyusingAFM,FTIRandPLspectrometers.TheresultsshowtheDLCfilmwithdenseandhomogenousnanometergrainscanbedepositedonthePSusedaspassivationcoatingasitcanterminateoxidereactiononthesurfaceofthePS.Furthermore,certainratioofhydrogenexistedintheDLCfilmcanbeimprovedtoformhydridespeciesontheDLC/PSinterfaceasthecentersoftheluminescencesothattheDLCcoatingisofbenefitnotonlytothepassivationofthePSbutalsototheimprovementofitsluminescentintensity.