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  • 简介:Inordertoresearchsurfacecharacteristicsofliquidmetalwhichbasedonhydrodynamicstheoryandinteractionprinciplebetweenlaserwaveandsurfacetensionstationarywaveofliquidmetal,itisfinishedtoprovideanentirelytheoreticalequation,apparatusandtechniquesofthemeasuringthesurfacetensionforliquidmetalathightemperature.Thisapparatusisanautomaticmeasuringsystemforinformationcollectingandprocessing,inwhichacomputerisattachedtochargecoupleddevice,drivingcircuitsandA/Dconverter.ApplyingthenewapparatusthesurfacetensionvaluesofSn-Pbbasedbinaryandternaryalloysoldershavebeenobtainedonthebasisoftheabovework.TheexperimentalresultsindicatethatthesurfacetensionvaluesofliquidmetalSn-Pbbasedsoldersaredecreasedby37.3%and31.9%respectively.When1%ofBiorInisaddedinthesolders,theelementsBiandInhaveevidentsurfaceactivityinSn-Pbbasedsoldersandthewettabilityofthesoldersinincreasedwithincreasingsurfaceactivity.

  • 标签: 液体金属 焊料 表面活性元素 表面张力 润湿性
  • 简介:ANewMethodofStudyingSurfaceActivityforLiquidAloys①②YANGYongzheng(DepartmentofAppliedphysics,NorthwesternPolytechnicalUniversi...

  • 标签: LIQUID Metal SOLDER SURFACE ACTIVITY Element
  • 简介:Se89Zn2Te5In4和Se87Zn2Te5In6chalcogenide合金的作文依赖者微结构形态学变化被调查。玻璃质并且nanophase表面和这些合金的结构的形态学与扫描电子显微镜(SEM)和传播电子显微镜(TEM)的帮助被描述了,并且他们的元素的集中从精力被证实散X光检查光谱学(EDX)。试验性的结果证明Se89Zn2Te5In4合金的微观结构属于纯玻璃质的状态,当Se87Zn2Te5In6合金与nanophase结构时。

  • 标签: 纳米结构 微观结构 合金 硫系 透射电子显微镜 扫描电子显微镜
  • 简介:RamanscatteringspectroscopyisappliedtoinvestigatethephononmodesinGaxIn1-xP(x=0.52)and(AlxGa1-x)0.51In0.49P(x=0.29)alloys.Two-modebehaviorinGaxIn1-xPandthree-modebehaviorin(AlxGa1-x)0.51In0.49Pareobserved.InorderedGaxIn1-xP,weclearlydistinguishtheTO1(GaP-like)modeandthesplittingofLO1(GaP-like)andLO2(InP-like)modes,whichisbelievedtobetheresultofsuperlatticeeffectofordering,andtheLO1+LO2mode,whichisobservedforthefirsttime.Inadditiontotheb/aratio,it'sfoundthattherelativeintensityoftheFLAandtheLO1+LO2modesalsocorrespondstothedegreeoforder.TheTO1andthesplittingofLO1andLO2devotetogethertothereductionofthe'valleydepth'.In(AlxGa1-x)0.51In0.49P,thedoublingofFLAisobserved.DuetotheinfluenceofAlcomposition,theGaP-likeLOmodebecomesashoulderoftheInP-likeLOmode.TheunresolvedRamanspectraindicatetheexistenceoforderedstructurein(AlxGa1-x)0.51In0.49Palloys.

  • 标签: SEMICONDUCTORS ORDER-DISORDER effects PHONONS LUMINESCENCE