简介:Recently,bismuthsulfide(Bi2S3)hasattractedmuchattentioninthethermoelectriccommunityowingtoitsabundance,lowcost,andadvancedproperties.However,itspoorelectricaltransportpropertieshavepreventedBi2S3devicesfromrealizinghighthermoelectricperformance.Inthiswork,ourmotivationistodecreasethelargeelectricalresistivity,whichisrecognizedastheoriginofthelowZTvalueinundopedBi2S3.Wecombinedmeltingandsparkplasmasintering(SPS)inacontinuousfabricationprocesstoproduceBi2S3–xSex(x=0,0.09,0.15,0.21)andBi2S2.85–ySe0.15Cly(y=0.0015,0.0045,0.0075,0.015,0.03)samples.OurresultsshowthatSealloyingatSsitescannarrowthebandgapandactivateintrinsicelectronconduction,leadingtoahighpowerfactorof~2.0μW·cm–1·K–2atroomtemperatureinBi2S2.85S0.15,about100timeshigherthanthatofundopedBi2S3.Moreover,ourfurtherintroductionofClatomsintotheSsitesresultedinasecond-stageoptimizationofcarrierconcentrationandsimultaneouslyreducedthelatticethermalconductivity,whichcontributedtoahighZTvalueof~0.6at723KforBi2S2.835Se0.15Cl0.015.OurresultsindicatethathighthermoelectricperformancecouldberealizedinBi2S3withearth-abundantandlow-costelements.
简介:Polyamide/acrylonitrile-butadiene-styrenecopolymer(PA/ABS)blendshavedrawnconsiderableattentionfrombothacademiaandindustryfortheirimportantapplicationsinautomotiveandelectronicareas.DuetopoormiscibilityofPAandABS,developinganeffectivecompatibilizationstrategyhasbeenanurgentchallengetoachieveprominentmechanicalproperties.Inthisstudy,wecreateasetofmechanicallyenhancedPA6/ABSblendsusingtwomulti-monomermelt-graftedcompatibilizers,SEBSg-(MAH-co-St)andABS-g-(MAH-co-St).Thedisperseddomainsizeissignificantlydecreasedandmeanwhiletheunique“softshell-encapsulating-hardcore”structuresforminthepresenceofcompatibilizers.Theoptimummechanicalperformancesmanifestanincreaseof36%intensilestrengthandanincreaseof1300%inimpactstrength,comparedwiththeneatPA6/ABSbinaryblend.