简介：Wereviewrecentadvancesinthefieldofquantumdotlasersonsilicon.Asummaryofdeviceperformance,reliability,andcomparisonwithsimilarquantumwelllasersgrownonsiliconwillbepresented.Weconsiderthepossibilityofscalable,lowsize,weight,andpowernanolasersgrownonsiliconenabledbyquantumdotactiveregionsforfutureshort-reachsiliconphotonicsinterconnects.

简介：吸收系列和折射索引变化在一个核心/壳量点为激子理论上被计算。我们的方法论的优点是一个人能由在监禁潜力改变二个参数调查排斥核心的影响。光吸收上的激子量点的维数效果被学习了。在一样的政体，激子的光吸收紧张比为二维的量戒指为核心/壳量点是小得多的，这被发现了。线性并且非线性的光吸收系数和折射索引变化与监禁潜力的变化被检验了。结果证明光吸收和折射索引变化被核心/壳量点的排斥核心强烈影响。而且，计算结果也表明作为内部半径增加，山峰系数和激子的折射索引变化将显示出的吸收珍视在核心/壳量点的光Aharonov-Bohm摆动。

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简介：CdSequantumdotsensitizedsolarcells(QDSCs)modifiedwithgraphenequantumdots(GQDs)havebeensuccessfullyachievedinthisworkforthefirsttime.Satisfactorily,theoptimizedphotovoltage(Voc)ofthemodifiedQDSCswasapproximately0.04VhigherthanthatofplainCdSeQDSCs,consequentlyimprovingthephotovoltaicperformanceoftheresultingQDSCs.ServedasanovelcoatingontheCdSeQDsensitizedphotoanode,GQDsplayedavitalroleinimprovingVocduetothesuppressedchargerecombinationwhichhasbeenconfirmedbyelectronimpedancespectroscopyaswellastransientphotovoltagedecaymeasurements.Moreover,differentadsorptionsequences,concentrationanddepositiontimeofGQDshavealsobeensystematicallyinvestigatedtoboostthepowerconversionefficiency(PCE)ofCdSeQDSCs.AfterthecoatingofCdSewithGQDs,theresultingchampionCdSeQDSCsexhibitedanimprovedPCEof6.59%underAM1.5Gfullonesunillumination.