简介:MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.
简介:Athreedimensionalsteady-statemagnetohydrodynamicmodelisdevelopedforthearcplasmainaDCsubmergedelectricarcfurnacefortheproductionoffusedMgO.Thearcisgeneratedinasmallsemi-enclosedspaceformedbythegraphiteelectrode,themoltenbathandunmeltedrawmaterials.Themodelisfirstusedtosolveasimilarprobleminasteelmakingfurnace,andthecalculatedresultsarefoundtobeingoodagreementwiththepublishedmeasurements.ThebehaviorofarcswithdifferentarclengthsisalsostudiedinthefurnaceforMgOproduction.Fromthedistributionofthearcpressureonthebathsurfaceitisshownthatthearcplasmaimpingementislargeenoughtocauseacrater-likedepressiononthesurfaceoftheMgObath.Thecirculationofthehightemperatureairundertheelectrodemayenhancethearcefficiency,especiallyforashorterarc.