简介:ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.
简介:Theinfluenceofp-typeGaN(pGaN)thicknessonthelightoutputpower(LOP)andinternalquantumefficiency(IQE)oflightemittingdiode(LED)wasstudiedbyexperimentsandsimulations.TheLOPofGaN-basedLEDincreasesasthethicknessofpGaNlayerdecreasesfrom300nmto100nm,andthendecreasesasthethicknessdecreasesto50nm.TheLOPofLEDwith100-nm-thickpGaNincreasesby30.9%comparedwiththatoftheconventionalLEDwith300-nm-thickpGaN.ThevariationtrendofIQEissimilartothatofLOPasthedecreaseofGaNthickness.ThesimulationresultsdemonstratethatthehigherlightefficiencyofLEDwith100-nm-thickpGaNisascribedtotheimprovementsofthecarrierconcentrationsandrecombinationrates.