简介:Au/Al_2O_3/Al金属/绝缘体/金属连接(MIMJ)和Au/SiO_2/Simetal/insulator/Si连接(MISJ)成功地被构造了。这些连接的轻排放被表面电浆子电磁声子(SPP)在表面粗糙下面调停。从MISJ的轻排放从MIMJ比那更一致、稳定。MISJ的轻力量比MIMJ的高是大约2份~3订单。MISJ的轻排放光谱特别被分析。在光谱,有一座主要山峰在610nm~6的波长定位了40nm,它主要由于有在Au/air和Au/SiO_2接口的表面粗糙的SPP的夫妇。在更短的波长区域位于光谱的一座弱山峰也被发现,它被doped-Si血浆摆动的直接放射引起。
简介:Afast-speedpulsedetectorbasedonn-typeSi-Schottkydiodemountedinthewaveguideisinvestigated.Therelationofthefast-speedpulsedetectorbetweenresponsetimeand3dBbandwidthisanalyzed.Byadoptingthetunablecircuit,thematchedbandwidthisachievedaswideaspossible.Experimentalresultsshowthatthepulseresponsetimeofthedetectorislessthan150pswithinrandomcarriersignal500MHzbandwidthrangebetween35GHzto39GHzviatuningcircuit.Thedetectorisveryeasytooperatebecauseitdoesnotneedbiascurrentorsynch-pulsesource.
简介:镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射,X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了,nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则,与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.