简介:BasedonthesinglebiasingelectrodeexperimentstooptimizetheconfinementofplasmainthedeviceofKT-5Ctokamak,dual-biasingelectrodeswereinsertedintotheKT5Cplasmaforthefirsttimetoexploretheenhancingeffectsofbiasingandthemechanismsofthebiasing.Bymeansofapplyingdifferentcombinationsofbiasingvoltagesontothedualelectrodes,thechangesofE_r,whicharethekeyfactorforboostinguptheE_r×Bflowshear,wereobserved.Thetimeevolutionshowedthattheinnerelectrodeplayedamajorroleindual-biasing,whichdrewlargercurrentthantheouterone.Theouterelectrodeproducedlittleinfluence.Itturnedoutthatthedual-biasingelectrodeswereaseffectiveasasingleoneinimprovingtheplasmaconfinement,forthemechanismofbiasingwasessentiallyanedgeeffect.
简介:Anewtwo-dimensionalstructuremodulationalongc-andb-axeshasbeendiscoveredinsuperconductingsinglecrystalsofBi2.13Sr1.87CuO6+δ(Bi2201)byx-rayscattering.Suchmodulationstructuredoesnotexistinnon-superconductingBi2201singlecrystals.Butinsteadlatticedistortionsareobservedinthea-b-plane.Thisphenomenonmayindicatethatbothstrainrelaxationandchargemodulationinthea-b-planeareimportanttotheoccurrenceofsuperconductivityinthecopperoxides.
简介:压力管卧式重水反应堆(CANDU6)具有相互独立的冷却剂系统和慢化剂系统。慢化剂系统将堆芯高能裂变中子慢化到能维持持续裂变所需的热中子水平,并将慢化中子过程中产生的热量带出。在反应堆大修期间,需要对再循环冷却水系统(RCW)进行检修,则需要并投入其备用系统,但是RCW备用系统仅对反应堆冷却剂系统进行冷却,不提供慢化剂系统热交换器冷却水。所以在RCW备用系统投入的情况下,慢化剂系统丧失冷却。为判断在此情况下慢化剂的温度变化情况,本文对CANDU6大修期间慢化剂系统丧失冷却情况下的温度变化进行分析并与试验结果进行比较,评估是否会由于温度过高而导致系统失效。
简介:Thisworkinvestigatesinternalplasmaprocessparametersusingahairpinresonanceprobeandopticalemissionspectroscopy.ThedependenceofelectrondensityandatomicfluorineonthepercentageofoxygeninanSF6/O2dischargewasmeasuredusingthesemethods.AnRIEOxfordInstruments80pluschamberwasusedfortheexperiments.Twodifferentprocesspowers(100Wand300W)ataconstantpressure(100mTorr)wereused,anditwasfoundthattheopticalemissionintensityofthe703.7nmand685.6nmlinesofatomicfluorineincreasedrapidlyasoxygenwasaddedtotheSF6discharge,reachedtheirmaximumatanO2fractionof20%andthendecreasedwithfurtheradditionofoxygen.TheplasmaelectrondensitywasalsostronglyinfluencedbytheadditionofO2.
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简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.