学科分类
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4 个结果
  • 简介:Apassiveopticalnetwork(PON)monitoringsystemcombinedlightpulseandfrequencysweeptechniquesisproposedandverifiedinafieldtest.Thelightpulsesurveysovertheallwholenetworkandthefrequencysweepareusedtoinvestigateanyfaultinthelink.Thefieldtestisperformedwith4PONs.EachPONismonitoredat4ports,oneisthesplitterportandtheotherthreearearbitrarychosenmultipleopticalunits(ONUs).AllthetestedPONsaremonitoredinturnsonceperhour.Faultsatthefeederandbranchfiberhavebeenobservedinthisfieldtestandhavebeenanalyzedwiththemonitoringsystem.

  • 标签: PON系统 监测系统 监控技术 频率扫描技术 无源光网络 复合
  • 简介:Arobustcontrollerforbanktoturn(BTT)missileswithaerodynamicfinsandreactionjetcontrolsystem(RCS)isdevelopedbasedonnonlinearcontroldynamicmodelscomprisingcouplingsandaerodynamicuncertainties.Thefixedtimeconvergencetheoryisincorporatedwiththeslidingmodecontroltechniquetoensurethatthesystemtracksthedesiredcommandwithinuniformboundedtimeunderdifferentinitialconditions.Unlikepreviousterminalslidingmodeapproaches,theboundofsettlingtimeisindependentoftheinitialstate,whichmeansperformancemetricslikeconvergenceratecanbepredictedbeforehand.Toreducetheburdenofcontroldesignintermsofrobustness,extendedstateobserver(ESO)isintroducedforuncertaintyestimationwiththeoutputsubstitutedintothecontrollerasfeedforwardcompensation.Cascadecontrolstructureisemployedwiththeproposedcontrollawandthereinthecompoundcontrolsignalisobtained.Afterwards,controlinputsfortwokindsofactuatorsareallocatedonthebasisoftheirinherentcharacteristics.Finally,anumberofsimulationsarecarriedoutanddemonstratetheeffectivenessofthedesignedcontroller.

  • 标签: reaction jet CONTROL compound CONTROL fixed
  • 简介:在没有第二等的数据的compound-Gaussian喧嚷的适应雷达察觉的问题在这个paper.In大多数被认为实际应用,训练数据的数字是克服的limited.To训练数据的缺乏,一个autoregressive(AR)-processbased协变性矩阵评估者是proposed.Then,没有data.Finally训练,与一步舞概括了的估计的协变性矩阵,可能性的比率测试(GLRT)察觉者被设计,我们的建议察觉者的察觉性能被估计

  • 标签: 辅助数据 GLRT 高斯杂波 AR 复合 检测器
  • 简介:Theinvertedbottom-emittingorganiclight-emittingdevices(IBOLEDs)wereprepared,withthestructureofITO/A1(xnm)/LiF(1nm)/Bphen(40nm)/CBP:Girl(14%):R-4b(2%)(10nm)/BCP(3nm)/CBP:Glrl(14%):R-4b(2%)(20nm)/TCTA(10nm)/NPB(40nm)/MoO3(40nm)/A1(100rim),wherethethicknessofelectroninjectionlayerA1(x)are0nm,2nm,3nm,4nmand5nm,respectively.Inthispaper,theelectroninjectionconditionandluminancepropertiesofinverteddeviceswereinvestigatedbychangingthethicknessofA1layerinAFLiFcompoundthinfilm.ItturnsoutthattheintroductionofA1layercanimproveelectroninjectionofthedevicesdramatically.Furthermore,thedeviceexertslowerdrivingvoltageandhighercurrentefficiencywhenthethicknessofelectroninjectionA1layeris3nm.Forexample,thecurrentefficiencyofthedevicewith3-urn-thickA1layerreaches19.75cd·A^-1whendrivingvoltageis7V,whichis1.24,1.17and17.03timeslargerthanthoseofthedeviceswith2nm,4nmand5nmA1layer,respectively.Thedevicepropertyreachesuptothelevelofcorrespondingconventionaldevice.Inaddition,allin-verteddeviceswithelectroninjectionA1layershowsuperiorstabilityofcolorcoordinateduetotheadoptionofco-evaporationemittinglayerandBCPspacer-layer,andthecolorcoordinateoftheinverteddevicewith3-nm-thickAIlayeronlychangesfrom(0.5806,0.4056)to(0.5328,0.4363)whendrivingvoltageincreasesfrom6Vto10V.

  • 标签: ENHANCEMENT of electron injection COMPOUND thin