简介：Anoveldischargedeviceisdesignedonthebasisoftheconfigurationofmicro-hollowcathodedischarge(MHCD).ByusingmanyMHCDsinparallelconnection,amicro-dischargearraycanbeconstructed.Withthemicro-dischargearray,ahigh-pressurehigh-currentdensityglowdischargeplasmascanbeformedtomakeaplasmadisplaypanel(PDP).Anairdischargeexperimentisfinishedwiththedischargedevice.Thestabledirectcurrentglowdischargeisformedunderthepressurefrom20Torrto500Torr.Thevoltage-currentcharacteristiccurveandthedischargephotographarenoted.Thevoltage-currentcharacteristiccurvehasapositivedifferentialresistancecoefficientonthewholedischargerange.Theestimatedcurrentdensityreaches70.1A/cm3,thepowerdensityis3.6×104W/cm3,andtheelectrondensityisintheorderof1013cm-3atp=200TorrandID=10mA.TheexperimentalresultsindicatethatthedesigneddischargedeviceisappropriateforPDP.

简介：与直接脱离相比，prepulse被用来在激光血浆推进提高联合系数。联合系数与在主要横梁和prepulse之间的延期时间是相关的，这被发现。在12ns的一延期时间，联合系数到达5.8脳的最大值10?5N/W。CLC数字O532+.25文件代码A

简介：Byusingspectroscopicphotoconductance,transmittanceandluminescencemethods,theopticalcharacterizationofGaNgrownbyplasmasourceMBEhavebeenevaluated.Theimperfectionoftheepitaxiallayerdeducedfromthemeasuredresultshavebeendiscussed.Thetransientresponsesofthephotoconductivedetectorshavebeenmeasured.Twotimeconstantsof0.17msand6.85msatroomtemperaturearededucedfromthemeasuredresults.Theoriginshavealsobeendiscussed.

简介：TheuseofabackgroundplasmainadielectricCherenkovmasercaneffectivelyincreasetheefficiencyandthemicrowaveoutputpowerofthedevice.Here,theeffectofthelongitudinaluniformmagneticfieldonthewave-beaminteractionoftheplasma-filleddielectricCherenkovmaserisexaminedbysolvingthebeam-plasma,dielectriclinedwaveguidedispersionequation.Andtheeffectsofthelongitudinalmagneticfield,plasmadensityanddielectricparametersonthelinearspatialgrowthrateandtheenergyratioarepresented.

简介：ReactiveionetchingcharacteristicsofGaAs,GaSb,InPandInAsusingCl2/Arplasmahavebeeninvestigated,itisthat,etchingratesandetchingprofilesasfunctionsofetchingtime,gasflowratioandRFpower.Etchratesofabove0.45μm/rinand1.2μm/rinhavebeenobtainedinetchingofGaAsandGaSbrespectively,whileveryslowetchrates(＜40nm/rin)wereobservedinetchingofIn-containingmaterials,whichwerelinearlyincreasedwiththeappliedRFpower.EtchedsurfaceshaveremainedsmoothoverawiderangeofplasmaconditionsintheetchingofGaAs,InPandInAs,however,werepartlyblackenedinetchingofGaSbduetoaroughappearance.

简介：TheelectromagneticpropagationthroughaninhomogeneousmagnetizedplasmaslabisstudiedusingtheZ-transformformulationoftheFinite-DifferenceTime-Domain(FDTD)method.Thedirectionofelectromagneticpropagationisparalleltothebiasingmagneticfiled.TovalidatetheZ-transformalgorithm,thereflectionandtransmissioncoefficientsfortheright-handcircularlypolarizedwaveofthehomogeneousmagnetizedplasmaslabarecomputedbymeansofdiscreteFouriertransform.ThecomparisonbetweenthereflectionandtransmissioncoefficientsofthehomogeneousplasmaslabandanalyticalvaluesindicatesthatZ-transformalgorithmisveryaccurate.Whentheplasmafrequencyvariesaccordingtothesquarerootandparabolicrelations,thereflectionandtransmissioncoefficientsoftheinhomogeneousmagnetizedplasmaslabarecomputed.

简介：ＴhepatternofITOtransparentelectrodeofpixelcellsinTFTAMLCDisacriticalstepinthemanufacturingprocessofflatpaneldisplaydevices,thedevelopmentofsuitableplasmareactiveionetchingisnecessarytoachievehighresolutiondisplay.InthisworkweinvestigatedtheAr/CF4plasmaetchingofITOasfunctionofdifferentparameters.WedemonstratedtheabilityofthisplasmatoetchITOandachievedanetchingrateofabout3.73nm/min,whichisexpectedtoincreaseforlongpumpingdownperiod,andalsothroughadditionofhydrogenintheplasma.FurthermorewedescribedtheITOetchingmechanisminAr/CF4plasma.Theinvestigationofselectivityshowedtobeverylowoversiliconnitrideandsilicondioxidebutveryhighoveraluminum.

简介：WereportthedepositionofNb2O5filmsonunheatedBK-7glasssubstratesusingremoteplasmasputteringsystem.Theremoteplasmageometryallowspseudoseparationofplasmaandtargetbiasparameters,whichofferscompletedepositionratecontrol.Usingappropriateoxygenflowrates,high-densityandlow-lossNb2O5filmsaredepositedwithratesupto0.49nm/s.Lowerdepositionrates(~0.026nm/s)canalsobeobtainedbyworkingatlowtargetcurrentandvoltageandatlowpressure.Nb2O5filmsdepositedatdifferentrateshavetherefractiveindexofabout2.3andtheextinctioncoefficientaslowas6.9×10-5.

简介：Theevolutionoftheelectronphaseorbitsbasedonthemulti-photonnonlinearComptonscatteringwiththehighpowerlaser-plasmaisdiscussedbyusingKroll-Morton-Rosenbluththeory.Therandomevolutionoftheun-capturedelectronphaseorbitsfromperiodicitytonon-periodicityisfoundaftertheenergyhasbeenexchangedbetweentheelectronandphotons.Withtheincreaseoftheabsorbedphotonnumbernbyanelectron,thisevolutionwillbemoreandmoreintense,whilewhichisrapidlydecreasedwiththeenhancementofthecollisionnon-flexibilityξandtheirinitialspeedsoftheelectronsandphotons,butthisevolutionislowerthanthatinthehighpowerlaserfield.Whentheelectronsarecapturedbythelaserfield,theevolutionisfinished,andtheelectronswillstablytransport,andthephotonsdon'tprovidetheenergyfortheseelectronsanymore.

简介：劈啪作响的免职涂层在电子横梁(EB)上提供重要优点免职，包括的高收拾行李的密度，环境稳定性和极其低的损失。但是固有的高压缩的压力尽最大努力影响它的申请激光系统。这篇论文描述一篇小说扔的高损坏阀值激光镜子的技术可行性遥远的血浆劈啪作响技术。这种技术基于从目标遥远地产生集中的血浆然后有磁力地驾驶血浆到目标认识到劈啪作响的完整的制服。在目标电压和目标电流之间的伪独立提供我们很灵活的参数调节，特别为电影压力控制。免职条件被优化充分让步氧化并且低压缩压力单身者层HfO2和SiO2。为在1064nm的HfO2/SiO2激光镜子的43.8J/cm2的高损坏阀值被获得。第一次，劈啪作响的遥远的血浆成功地在与高效扔激光镜子被使用。