简介:在一个二维的方形的数组的螺线波浪的开发由于部分离子隧道块(钾,钠)被调查,节点的动力学被HodgkinHuxley神经原描述,这些神经原最近被结合邻居连接。参数比率xNa(并且xK),它定义钠(钾)的工作离子隧道数字的比率到钠的全部的离子隧道数字(并且钾),被用来测量隧道块导致的移动传导力。在二参数的阶段空间(参数比率对毒害的区域)的统计可变R的分发广泛地被计算为部分离子隧道块导致的螺线波浪的转变标记参数区域,有同步R的更小的因素的区域被联系那个螺线波浪使明白毒害的隧道、柔韧的参数区域。当毒害的区域(钾或钠)和沉醉的度是小的时,螺线波浪保持活着,不同转变(死亡,几个螺线波浪共存或多手臂螺线波浪出现)发生在中等比率xNa下面(并且xK)当堵住的区域的尺寸超过某些阀值时。螺线波浪的决裂发生,螺线的多手臂飘动当隧道噪音被考虑时,被观察。
简介:Inthispaper,anewdevelopedmulti-channelpre-processingcircuitforsignalsfromtemperaturesensorwasintroducedinbrief.Thiscircuitwasdevelopedtocollectandamplifythesignalsfromtemperaturesensor.Thisisauniversalcircuit.Itcanbeusedtoprocessthesignalsfromthermocouplesandalsousedtoprocesssignalsfromthermistors.Thiscircuitwasmountedinastandardbox(440W×405D×125Hmm)asaninstrument.The
简介:与飘移散开(DD)的联合使用模型,试验性的测量参数和小信号的正弦曲线不变的分析,我们为4H-SiC提取Y参数埋葬隧道的金属氧化物半导体域效果晶体管(BCMOSFET)。输出电线走火水流获得G,梅森的不变的U分别地在普通来源的配置f(T)和摆动f(最大)的最大的频率为外推的统一水流获得频率被计算。这里f(T)=800MHz和f(最大)=5GHz为4H-SiCBCMOSFET被提取,当地效果活动性到达它的山峰时,珍视87cm(2)/Vs什么时候V-GS=4.5V。模拟结果清楚地证明4H-SiCBCMOSFET和地效果活动性的典型频率是优异的,由于新奇结构,与常规MOSFET相比。
简介:Veryrecently,theBelleandBESIIIexperimentsobservedanewcharmonium-likestateX(3823),whichisagoodcandidatefortheD-wavecharmonium(13D2).BecausetheX(3823)isjustneartheDˉDthreshold,thedecayX(3823)!J=+??canbeagoldenchanneltotestthesignificanceofcoupled-channeleffects.Inthiswork[1],thisdecayisconsideredincludingboththehidden-charmdipionandtheusualquantumchromodynamicsmultipoleexpansion(QCDME)contributions.
简介:Wehavedesignedandrealizedanathermal4-channelwavelength(de-)multiplexerinsiliconnitride(SIN).Minimizedthermalsensitivityisachievedinawidewavelengthrangebyusingwideandnarrowwaveguideswithlowanddifferentthermal-opticcoefficientsinthetwoarmsofMach-Zehnderinterferometers(MZIs).TheSiNcorelayerandSiO2claddinglayersaredepositedbyalow-temperatureplasma-enhancedchemicalvapordep-ositionprocess.ThefabricatedMZIfilterexhibitsathermalsensitivitywithin4-2.0pm/℃inawavelengthrangeof55nmtonear1300nm.Then,anathermal(de-)multiplexerbasedoncascadedMZIshasbeendemonstratedwithacrosstalk〈-22dBandathermalsensitivity〈4.8pm/℃forallfourchannels,reducedby77%comparedtoaconventionalSiN(de-)multiplexer.OwingtothepassiveoperationandcompatibilitywiththeCMOSback-endprocess,ourdeviceshavepotentialapplicationsin3Dintegrationofphotonicsandelectronics.
简介:Differentinterpretationsareintroducedtodescribetheuprisingoscillatorystructuresof^16O+^24Mgreaction.Thegrossresonantstructurestotheground-andfirst-excitedstateshavebeenstudiedsuccessfullyintermsofboththeDWBAandcoupledchannelcalculations.TheDWBAresultsintroduceareasonabledescriptionoftheangulardistributionsandexcitationfunctiondata.ThecoupledchannelcalculationsprovideabetteragreementwiththeexperimentalforwardandbackwardangledatathantheDWBAcalculations.
简介:
简介:Electron-wallinteractionisalwaysrecognizedasanimportantphysicalproblembecauseofitsremarkableinfluencesonthrusterdischargeandperformance.Basedonexistingtheories,anelectrodeispredictedtoweakenelectron-wallinteractionduetoitslowsecondaryelectronemissioncharacteristic.Inthispaper,theelectron-wallinteractioninanAton-typeHallthrusterwithlow-emissiveelectrodesplacedneartheexitofdischargechannelisstudiedbyafullykineticparticle-incellmethod.Theresultsshowthattheelectron-wallinteractionintheregionofsegmentedelectrodeisindeedweakened,butitissignificantlyenhancedintheremainingregionofdischargechannel.Itismainlycausedbyelectrodeconductivepropertywhichmakesequipotentiallinesconvextowardchannelexitandevenparalleltowallsurfaceinnear-wallregion;thisconvexequipotentialconfigurationresultsinsignificantphysicaleffectssuchasrepellingelectrons,whichcausestheelectronstomovetowardthechannelcenter,andtheelectronsemittedfromelectrodestoberemarkablyaccelerated,therebyincreasingelectrontemperatureinthedischargechannel,etc.Furthermore,theresultsalsoindicatethatthedischargecurrentinthesegmentedelectrodecaseislargerthaninthenon-segmentedelectrodecase,whichisqualitativelyinaccordancewithpreviousexperimentalresults.
简介:ThispaperproposesanadaptivejointsourceandchannelcodingschemeforH.264videomulticastoverwirelessLANwhichtakesintoaccounttheusertopologychangesandvaryingchannelconditionsofmultipleusers,anddynamicallyallocatesavailablebandwidthbetweensourcecodingandchannelcoding,withthegoaltooptimizetheoverallsystemperformance.Inparticular,sourceresilienceanderrorcorrectionareconsideredjointlyintheschemetoachievetheoptimalperformance.Andachannelestimationalgorithmbasedontheaveragepacketlossrateandthevarianceofpacketlossrateisproposedalso.Twooverallperformancecriteriaforvideomulticastareinvestigatedandexperimentalresultsarepresentedtoshowtheimprovementobtainedbythescheme.
简介:Anovelstructureisproposedfordoublingtheverticalbreakdownvoltageofsilicon-on-insulator(SOI)devices.Inthisnewstructure,theconventionalburiedoxide(BOX)inanSOIdeviceissplitintotwosections:thesource-sectionBOXandthedrain-sectionBOX.Ahighly-dopedSilayer,referredtoasanon-depletionpotential-clampedlayer(NPCL),ispositionedunderandclosetothetwoBOXsections.InthesplitBOXesandtheSiregionabovetheBOXes,theblockingvoltage(BV)isdividedintotwopartsbytheNPCL.ThevoltageintheNPCLisclampedtobenearlyhalfofthedrainvoltage.Whenthedrainvoltageapproachesabreakdownvalue,thevoltagesustainedbythesource-sectionBOXandtheSiregionunderthesourcearenearlythesameasthevoltagesustainedbythedrain-sectionBOXandtheSiregionunderthedrain.TheverticalBVisthereforealmostdoubled.TheeffectivenessofthisnewstructurewasverifiedforaP-channelSOIlateraldouble-diffusedmetal-oxidesemiconductor(LDMOS)andcanbeappliedtootherhigh-voltageSOIdevices.ThesimulationresultsshowthattheBVinanNPCLP-channelSOILDMOSisimprovedby55%andthespecificon-resistance(Ron,sp)isreducedby69%incomparisontotheconventionalstructure.
简介:TheenigmaticchargedstatesZc(3900),Zc(4020),Zc(4050),Zb(10610),andZb(10650)arestudiedwithinacoupled-channelSchr¨odingermodel[1],whereradiallyexcitedquark-antiquark(qˉq)pairs,withthesameangularmomentaandisospinasthea1(1260)andb1(1235),arestronglycoupledtotheirOkubo-Zweig-Iizuka-allowedde-caychannelsDˉD+ˉDDandDˉD,orBˉB+ˉBBandBˉB,inSandD-wave.Poles,matchingtheexperimentalmassandwidthofalltheabovestates,arefoundbyvaryingonlytwofreeparameters.In
简介:Thelocalpressuredistributionsandresistancecoefficients(f1andf2)throughthesharp180degturninarelativelyshort(L/De=4)two-passsmoothandrib-roughenedchannelwereinvestigatedforaReynoldsnumberrangeof1.0×10^3,9.0×10^3.Theribpitch-to-herghtratios(p/e)were5,10,and20,Theribheight-to-hydraulicdiamterratios(e/De)were0.025,0.050and0.10,andtheribanglesofattack(a)were90,45,60,-45,and-60deg.Ridswereinstallednotonlyinbeforeandafterturnregionsbutalsointurnregion.TheresultsshowthatresistancecoefficientsremainapproximatelyconstantwhenReynoldsnumberismorethan3.0×10^4,Theeffectsoftheribconfiguration(ribspacing,ribheight,andriborientation)ontheinletstraightductresistancecoefficient(f2)weresignificant,however,theireffectsontheoverallresistancecoefficient(f1)weredilutedbythesharp-180turn.Forthisrelativelyshortchannel(L/De=4),theoverallresistancecoefficient(f1)wasgreatlyaffectedbythesharpturn.Correlationsfortheoverallresistance(f1)andinletstraightductresistancecoefficient(f2)arepresented.
简介:Weproposeanultra-simpledual-channelconfigurationforsimultaneouslyevaluatingtwobranchesofamultifunctionalintegratedopticchip(MFIOC).Intheconfiguration,theMFIOCisemployedasabeamsplittertoconstructthedemodulationinterferometertogetherwitha2×2fibercoupler.InterferencehappensbetweenpolarizationmodestravelingthroughdifferentchannelsoftheMFIOC.Thecross-couplingsofeachchannelarerespectivelycharacterizedbytheinterferencepeakswhichdistributeonoppositesidesofthecentralinterferencepeak.TemperatureresponsesoftheMFIOCareexperimentallymeasuredfrom-40°Cto80°C.Resultsshowthattheproposedconfigurationcanachievesimultaneousdual-channeltransientmeasurementswithresolutionof-90dBanddynamicrangeof90dB.Inaddition,thetwochannelsoftheconfigurationhaveconsistentmeasuringperformance,andthetwobranchesoftheMFIOChavedifferentresponsestotemperaturevariation.