简介：Indiumtinoxide(ITO)transparentconductingfilmwastreatedwithoxygenplasmaimmersionionimplantation(PIII).X-rayphotoelectronspectroscopy(XPS)wasemployedtocharacterizetheeffect.Theresultssuggestedthattheoxygencontentinthesurfacewasincreasedandmaintainedformorethan50hcomparedwithtraditionalplasma-treatedsamples.Meanwhile,theworkfunctionofITOestimatedbycomparingthepeakshiftintheXPSdiagramsuggestedacorrespondingincreasebymorethan1eV.
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