简介:在这份报纸,器官的量井设备,无机的半导体类似于type-II量很好,被制作了,在里面它NPB(N,N鈥?Di-[(1-naphthalenyl)-N,N鈥?diphenyl]-(1,1鈥?biphenyl)-4,4鈥?diamine)和Alq3(Tris-(8-quinolinolato)铝)分别地充当潜在的障碍层和潜在的井层。在electroluminescence,有井宽度减少的光谱的蓝移动与不同的井宽度为设备被观察,并且这被量尺寸效果和激子监禁效果的联合解释。有增加应用电压的光谱的蓝移动为一样的设备被观察,并且这以极化效果和量尺寸效果被解释。CLC数字TN383+.1这个工作被中国的国家性质科学基础支持(60576016,10374001),中国(2003CB314707)的国家关键基本研究专辑基础,国家高技术研究和开发中国(2006AA0380412)编程序,北京城市自然科学基础(2073030),中国(10434030)的国家性质科学基础的关键条款,和北京交通大学的优秀医生鈥檚科技革新基础
简介:Organicgreenlightemittingdevices(LEDs)withmulti-quantumwell(MQW)structurewerefabricated.Aromaticdiamine(TPD)wasusedasholetransportinglayerandpotentialbarrierlayer;Tris(8-hydroxyquinoline)aluminunum(Alq3)wasactedaselectron-transportingemitterandMQWgreenemitter.Airstablealuinum(Al)wasusedaselectron-injectioncontact.Theinfluenceofthethicknessofpotentialbarrierlayerandthenumberofquantumwellontheelectroluminescent(EL)efficienciesofthedeviceswasinvestigated.TheorganicLEDswithtwoquantumwellsshowedenhancedELefficiencies.Maximumexternalquantumefficiencyandbrightnesswere1.04%and7000cd/m^2,respectively.
简介:AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.