简介：Quantumdotlasershaveexcellentcharacteristicssuchastimperaturestabilityofthresholdcurrentandultra-highmaterialgain.Quantumdotstructuresfabricatedbyself-organizedgrowthhavehighcrystallineperfection,highquantumyieldofradiativerecombinationandhighsizehomogeneity.Mainadvantagesandoperatingpropertiesofquantumdotalsersfabricatedbyself-organizedgrowtharebrieflyintroduced.

简介：TheNANDoperationat250Gbit/sbasedonquantumdot-semiconductoropticalamplifiers(QD-SOAs)ismodeled.BysolvingtherateequationsofSOAsintheformofaMach-Zehnderinterferometer(MZI),theperformanceofNANDgateisnumericallyinvestigated.Themodeltakestheeffectsofampli?edspontaneousemission(ASE)andtheinputpulseenergyonthesystem'squalityfactorintoaccount.ResultsshowthatNANDgateinQD-SOA-MZIbasedstructureisfeasibleat250Gbit/swithaproperqualityfactor.Thedecreaseinqualityfactorispredictedforhighspontaneousemissionfactor(NSP).Foranidealamplifier(NSP=2),theQ-factoris17.8for30dBgain.