简介：Wehaveobservedsomekindsofdefectsinunseededrapidzone-melting-recrystallized（RZMR）SifilmsformedwithaRF-inducedgraphitestripheatersystem,usingcross-sectionspecimenelectronmicroscope.Theobserveddefectsaresubgrainboundaries（SGB）,dislocationsandmicrotwins.ThemostcommonlyobserveddefectsareSGBwhichformedasaresultofsomeorientationdifferencesbetweenadjacentgrainsduringtheirrapidself-nucleationgrowth.MixedtypeSGBwerefrequentlyobserved,althoughsomepuretiltortwistSGBexistedalsointheSifilms.Therotationangularcomponentaroundtheaxisparalleltoscanningdirectionismuchlargerthanthataroundotheraxes.SGBconsistprimarilyofarraysofdislocationandhavecrystallographicangulardeviationsofonedegreeorless.DuringSifilmcooling,dislocationsandmicrotwinswereformedduetonon-uniformthermalstress.ThecrystallographiccharactersofthedislocationsinSifilmsarethesameasthoseincommonbulkSisinglecrystals.TheirBurgersvectorsareb=a/2<110>.Somedis-locationsrunacrosstheSifilm,andtheamorphousSiO2layersonandunderneaththeSifilmcaneffectivelyblockthedislocationsandpreventthemfromenteringthelayers.MicrotwinswereobservedintheSifilmssometimes,thetwinningplanesbeing{111}.