Vacancy in 6H—Silicon Carbide Studied by Slow Positron Beam-中国期刊网

摘要 Thedefectchangesin6H-SiCafterannealingand10MeVelectronirradiationhavebeenstudiedbyusingavariable-energypositronbeam.Itwasfoundthatafterannealing,thedefectconcentrationinn-type6H-SiCdecreasedduetorecombinationwithinterstitials.Whenthesamplewasannealedat1400℃for30mininvacuum,a20-nmthicknessSilayerwasfoundonthetopoftheSiCsubstrate,thisisadirectproofoftheSiatomsdiffusingtosurfacewhenannealedathightemperaturestages.After10MeVelectronirradiation,forn-type6H-SiC,theSparameterincreasedfrom0.4739to0.4822,andtherelativepositron-trappingratewasabout27.878timesoftheoriginsample,thisshowsthattherearesomedefectscreatedinn-type6H-SiC.Forp-type6H-SiC,itisveryunclear,thismaybebecauseoftheoppositechargeofvacancydefects.

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Vacancy in 6H—Silicon Carbide Studied by Slow Positron Beam

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Vacancy in 6H—Silicon Carbide Studied by Slow Positron Beam

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