Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing-中国期刊网

摘要 Al-inducedlateralcrystallizationofamorphoussiliconthinfilmsbymicrowaveannealingisinvestigated.ThecrystallizedSifilmsareexaminedbyopticalmicroscopy,Ramanspectroscopy,transmissionelectronmicroscopyandtransmissionelectrondiffractionmicrography.Aftermicrowaveannealingat480℃for50min,theamorphousSiiscompletelycrystallizedwithlargegrainsofmain(111)orientation.Therateoflateralcrystallizationis0.04μm/min.Thisprocess,labeledMILC-MA,notonlylowersthetemperaturebutalsoreducesthetimeofcrystallization.ThecrystallizationmechanismduringmicrowaveannealingandtheelectricalpropertiesofpolycrystallineSithinfilmsareanalyzed.ThisMILC-MAprocesshaspotentialapplicationsinlargeareaelectronics.

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Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

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Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

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