P-typenitrogen-dopedZnOfilmsarepreparedsuccessfullybyin-situthermaloxidationofZn_3N_2films.Thepreparedfilmsarecharacterizedbyx-raydiffraction,non-Rutherfordbackscattering(non-RBS)spectroscopy,xrayphotoelectronspectroscopy,andphotoluminescencespectrum.TheresultsshowthattheZn_3N_2filmsstarttotransformtoZnOat400°Candthetotalnitrogencontentdecreaseswiththeincreasingannealingtemperature.Thep-typefilmsareachievedat500℃withalowresistivityof6.33Ω·cmandahighholeconcentrationof+8.82×10~(17)cm~(-3),aswellasalowlevelofcarboncontamination,indicatingthatthesubstitutionalnitrogen(N_O)isaneffectiveacceptorintheZnO:Nfilm.ThephotoluminescencespectrashowclearUVemissionsandalsoindicatethepresenceofoxygenvacancy(V_O)defectsintheZnO:Nfilms.Thep-typedopingmechanismisbrieflydiscussed.
