Interfacial Properties of AlN/Si(111) Grown by Metal—Organic Chemical Vapour Deposition

(整期优先)网络出版时间:2002-04-14
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WehavestudiedtheinterfacialstructuresofAlN/Si(111)grownbymetal-organicchemicalvapourdeposition.X-rayphotoelectronspectroscopyandAngerelectronspectroscopywereusedtoanalysethecomponentsandchemicalstructuresofAlN/Si(111).Theresultsindicatedthatamix-crystaltransitionregion,approximately12nm,waspresentbetweentheAlNfilmandtheSisubstrateanditwascomposedofAlNandSi3N4.AfteranalysiswefoundthattheexistenceofSi3N4couldnotbeavoidedintheAlN/Si(111)interfacebecauseofstrongdiffusionat1070℃.EveninAlNlayerSi-Nbonds,Si-Sibondscanbefound.