Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c

首页 > 《中国物理快报：英文版》 > 2002年10期 > Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c—Axis Parallel to the Substrate

（整期优先）网络出版时间：2002-10-20

作者: 吕建国;叶志镇;等

理学 >物理

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WereportonN-dopedp-typeZnOfilmswiththec-axisparalleltothesubstrate.ZnOfilmswerepreparedonana-Al2O3(0001)substratebysolid-sourcechemicalvapourdeposition(CVD),Zn(CH3COO)2.2H2OwasusedastheprecursorandCH3COONH4asthenitrogensource.Thegrowthtemperaturewasvariedfrom300℃to600℃,theas-grownZnOfilmdepositedat500℃showedp-typeconductionwithitsresistivityof42Ωcm,carrierdensity3.7×10^17cm^-3andHallmobility1.26cm^2V^-1.s^-1atroomtemperature,whicharethebestpropertiesforp-typeZnOdepositedbyCVD.Thep-typeZnOfilmpossessesatransmittanceofabout85%inthevisibleregionandabandgapof3.21eVatroomtemperature.

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中国物理快报：英文版

2002年10期

Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c—Axis Parallel to the Substrate

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Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c—Axis Parallel to the Substrate

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