Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

(整期优先)网络出版时间:2003-02-12
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Theprincipleofthetwocarrierscontributingtocarrythepixelsignalchargesisfirstlypresented,andthenthebipolarjunctionphotogatetransistor(BJPT)withhighperformanceisproposedfortheCMOSimagesensor.Thenumericalanalyticalmodelofthephoto-chargetransferforthebipolarjunctionphotogateisestablishedindetail.Somenumericalsimulationsareobtainedunder0.6μmCMOSprocess,whichshowthatitsreadoutrateincreasesexponentiallywiththeincreaseofthephoto-chargeatappliedvoltage.