Inthispaper,polycrystallinesiliconfilmsweredepositedbyelectroncyclotronresonanceplasma-enhancedchemicalvapordeposition(ECR-PECVD)usingSiH_4/ArandSiH_4/H_2gaseousmixture.EffectsofargonflowrateonthedepositionefficiencyandthefilmpropertywereinvestigatedbycomparingwithH_2.TheresultsindicatedthatthedepositionrateofusingArasdischargegaswas1.5-2timeshigherthanthatofusingH_2,whilethepreferredorientationsandthegrainsizesofthefilmswereanalogous.FilmcrystallinityincreasedwiththeincreaseofArflowrate.OptimizedflowratioofSiH_4toArwasobtainedasF(SiH_4):F(Ar)=10:70forthehighestdepositionrate.
