Highlyc-axis-orientedZnOfilmsweredepositedsuccessfullyonthenucleationsidesoffree-standingdiamond(FD)filmsbythedirectcurrent(DC)magnetronsputteringmethod.Theeffectofthesputteringparameters,suchaspower,gaspressureandsputteringplasmacompositionofAr-to-O_2,onthepropertiesofZnOthinfilmswasinvestigatedindetail.X-raydiffraction(XRD)measurementsshowedthat,atasputteringpowerof200W,gaspressureof0.5PaandanAr-to-O_2compositionof1:1,ahigherintensityofthe(002)diffractionpeakandanarrowerfullwidthathalfmaximum(FWHM)weredetectedwhichmeanthighc-axisorientationandhighqualityoftheZnOfilms.ToimprovethequalityoftheZnOfilm,athinZnOlayerwaspre-grownasahomo-bufferlayer.XRDmeasurementsshowedthatthisbufferlayerhadabeneficialeffectonthestructuralandmorphologicalpropertiesofthepost-grownZnOfilm.
