InorganicbufferlayerssuchasSiO2orTiO2andtransparentconductiveindium-tin-oxide(ITO)filmswerepreparedonpolyethyleneterephthalate(PET)substratesbyionassisteddeposition(IAD)atroomtemperature,andtheeffectsofSiO2andTiO2onthebendingresistanceperformanceofflexibleITOfilmswereinvestigated.TheresultsshowthatITOfilmswithSiO2orTiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithoutthebufferlayerwhentheITOfilmsareinwardsbentatabendingradiusmorethan1.2cmandwhentheITOfilmsareoutwardsbentatabendingradiusfrom0.8cmto1.2cm.ITOfilmswithSiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithTiO2bufferlayeraftertheITOfilmsarebentseveralhundredsofcyclesatthesamebendingradius,fortheadhesionofSiO2isstrongerthanthatofTiO2.ThecompressivestressresultedfrominwardbendingleadstotheformationofmoredefectsintheITOfilmscomparedwiththetensilestressarisingfromoutwardbending.SiO2andTiO2bufferlayerscaneffectivelyimprovethecrystallinityofITOfilmsin(400),(440)directions.
