ByanalyzingthemainrecombinationmechanismsinGaInAsSbmaterials,thedependencesofthedarkcurrentdensityandopencircuitvoltageinn+-pGaInAsSbthermophotovoltaiccellsontherecombinationparameters,carrierconcentrationandcellthicknessarecalculated.Theresultsshowthatthedarkcurrentmainlycomesfromp-region,anditisrelatedwiththesurfaceandAugerrecombinationsinlowandhighcarrierconcentrationranges,respectively.ThesurfaceandAugerrecombinationscanbesuppressedbyreducingthesurfacerecombinationvelocityandcarrierconcentration,respectively.Thedarkcurrentdensitycanbesuppressedbyoptimizingmaterialparametersanddevicesurfacepassivationtechnique.SothehighopencircuitvoltagecanbeobtainedforGaInAsSbthermophotovoltaiccells.
